TIDUF63A December 2023 – June 2024
LMG3522R050 with top-side cooling design was used. This GaN FET has integrated protections and drivers. The gate drive speed can be configured by an external resistor. In the current setup, the switching speed is 80 kV / μs. The control signal is isolated from the MCU with digital isolator ISO6741. LMG3522R050 has junction temperature reporting. This temperature signal is isolated by using the same digital isolator. The temperature information can be used in the control MCU to thermally protect the converter when ambient temperature is high.