TIDUF63A December 2023 – June 2024
Two GaN FET designs were identified for the DC/AC stage:
Both the devices are top-side cooled, thus allowing higher power dissipation performance with respect to bottom-side cooled devices. By means of PLECs simulations, a 50-mΩ device was identified as a fit for a 230-VAC grid. Efficiency is higher because LMG3522R050 has lower output parasitic capacitance compared to LMG3522R030. For a 120-VAC grid variant, LMG3522R030 is the better choice.