TIDUF64A December   2023  – August 2024

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 Key System Specifications
    2. 1.2 PV Input with Boost Converter
    3. 1.3 Bidirectional DC/DC Converter
    4. 1.4 DC/AC Converter
  8. 2System Design Theory
    1. 2.1 Boost Converter
      1. 2.1.1 Inductor Design
      2. 2.1.2 Rectifier Diode Selection
      3. 2.1.3 MPPT Operation
    2. 2.2 Bidirectional DC/DC Converter
      1. 2.2.1 Inductor Design
      2. 2.2.2 Low-Voltage Side Capacitor
      3. 2.2.3 High-Voltage Side Capacitor
    3. 2.3 DC/AC Converter
      1. 2.3.1 Boost Inductor Design
      2. 2.3.2 DC-Link Capacitor
  9. 3System Overview
    1. 3.1 Block Diagram
    2. 3.2 Design Considerations
      1. 3.2.1 Boost Converter
        1. 3.2.1.1 High-Frequency FETs
        2. 3.2.1.2 Input Voltage and Current Sense
      2. 3.2.2 Bidirectional DC/DC Converter
        1. 3.2.2.1 High-Frequency FETs
        2. 3.2.2.2 Current and Voltage Measurement
        3. 3.2.2.3 Input Relay
      3. 3.2.3 DC/AC Converter
        1. 3.2.3.1 High-Frequency FETs
        2. 3.2.3.2 Current Measurements
        3. 3.2.3.3 Voltage Measurements
        4. 3.2.3.4 Auxiliary Power Supply
        5. 3.2.3.5 Passive Components Selection
    3. 3.3 Highlighted Products
      1. 3.3.1  TMDSCNCD280039C - TMS320F280039C Evaluation Module C2000™ MCU controlCARD™
      2. 3.3.2  LMG3522R030 650-V 30-mΩ GaN FET With Integrated Driver, Protection and Temperature Reporting
      3. 3.3.3  TMCS1123 - Precision Hall-Effect Current Sensor
      4. 3.3.4  AMC1302 - Precision, ±50-mV Input, Reinforced Isolated Amplifier
      5. 3.3.5  ISO7741 Robust EMC, Quad-channel, 3 Forward, 1 Reverse, Reinforced Digital Isolator
      6. 3.3.6  ISO7762 Robust EMC, Six-Channel, 4 Forward, 2 Reverse, Reinforced Digital Isolator
      7. 3.3.7  UCC14131-Q1 Automotive, 1.5-W, 12-V to 15-V VIN, 12-V to 15-V VOUT, High-Density > 5-kVRMS Isolated DC/DC Module
      8. 3.3.8  ISOW1044 Low-Emissions, 5-kVRMS Isolated CAN FD Transceiver With Integrated DC/DC Power
      9. 3.3.9  ISOW1412 Low-Emissions, 500kbps, Reinforced Isolated RS-485, RS-422 Transceiver With Integrated Power
      10. 3.3.10 OPA4388 Quad, 10-MHz, CMOS, Zero-Drift, Zero-Crossover, True RRIO Precision Operational Amplifier
      11. 3.3.11 OPA2388 Dual, 10-MHz, CMOS, Zero-Drift, Zero-Crossover, True RRIO Precision Operational Amplifier
      12. 3.3.12 INA181 26-V Bidirectional 350-kHz Current-Sense Amplifier
  10. 4Hardware, Software, Testing Requirements, and Test Results
    1. 4.1 Hardware Requirements
    2. 4.2 Note
    3. 4.3 Test Setup
      1. 4.3.1 Boost Stage
      2. 4.3.2 Bidirectional DC/DC Stage - Buck-Mode
      3. 4.3.3 DC/AC Stage
    4. 4.4 Test Results
      1. 4.4.1 Boost Converter
      2. 4.4.2 Bidirectional DC/DC Converter
        1. 4.4.2.1 Buck Mode
        2. 4.4.2.2 Boost Mode
      3. 4.4.3 DC/AC Converter
  11. 5Design and Documentation Support
    1. 5.1 Design Files
      1. 5.1.1 Schematics
      2. 5.1.2 BOM
    2. 5.2 Tools and Software
    3. 5.3 Documentation Support
    4. 5.4 Support Resources
    5. 5.5 Trademarks
  12. 6About the Authors
  13. 7Revision History

3.3.2 LMG3522R030 650-V 30-mΩ GaN FET With Integrated Driver, Protection and Temperature Reporting

The LMG3522R030 GaN FET with integrated driver and protections is targeting switch-mode power converters and enables designers to achieve new levels of power density and efficiency. The LMG3522R030 integrates a silicon driver that enables switching speeds up to 150 V / ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI's low-inductance package, delivers clean switching and minimal ringing in hard-switching power-supply topologies. Adjustable gate drive strength allows control of the slew rate from 20 V / ns to 150 V / ns, which can be used to actively control EMI and optimize switching performance. Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overtemperature, overcurrent, and UVLO monitoring.

For more details on this device, see the LMG3522R030 product page.