TIDUF64A December 2023 – August 2024
With an increase in demand for photovoltaic systems, inverters play an important role in facilitating the transition to renewable energy further and making solar energy more accessible for residential purposes. The modularity of string inverters, low cost-per-watt and easy amplification to attain higher power levels makes string inverters a good candidate for the single-phase market. With the additional possibility of energy storage via batteries, hybrid string inverters provide a good outlet to maximize the power utilization of the string input, and also provide an alternate pathway to supply the grid during night or low irradiation scenarios.
Such hybrid string inverters combine PV panel power point tracking with an inverter stage and bidirectional capabilities to include a battery stage, thus increasing the need for higher power density and efficiencies. This is where Gallium Nitrate (GaN) FETs can bring multiple benefits into the picture. Since GaN FETs support high switching frequencies, the GaN FETs allow the EMI filter and heat sink to be smaller, making the system more compact and lighter, thereby increasing the form factor of the design.
This reference design is intended to show an implementation of a two-channel single-phase string inverter with fully bidirectional power flow to combine PV input functionality with BESS supporting a wide range of battery voltages.
The design contains three main stages:
This system consists of two boards that are split by different functionality.
The first board, called DC/DC board, consists of two input boost converters for the individual string inputs and a DC/DC converter associated with the battery stage. The second board, called DC/AC board, consists of DC-link capacitors, DC/AC converter and filtering circuits. All the high-frequency switching components in the design are based on top-side cooled GaN FETs from TI.
Both the boards are mounted above an aluminum heat sink which is connected by means of thermal interface materials to the GaN FETs and additional thermal interface material to the SiC diode. The heat sink in the design is supposed to work in static cooling condition and the size is 324mm × 305mm × 57mm. Overall system dimension is 300mm × 280mm × 48mm, thus leading to a volume of 4 liters and a form factor of 2.5kW/l.