TIDUF68 February 2024
The focus on this test was to validate the transient response of the switch node voltage of the GaN inverter at 48V with low and maximum phase current. The other aim of the test was to validate the capacity or amount of local bypass capacitors at each of the LMG2100 GaN power modules.
The C2000 MCU was configured to generate a three-phase space vector with complementary PWM with 40kHz switching frequency and 16.6ns dead band. The PWM duty cycle per phase was configured to drive the corresponding phase current IA with IB = IC = –0.5 IA.
The LMG2100 switch node voltage was measured at the LMG2100 SW pin (pin 8), referenced to the PGND via close to the LMG2100 PGND pin (pin 9) as shown in Figure 4-7.
The pictures below show that the PWM input has a dead time of 16.6ns between the upper and lower bridge arms.