1.2V RF LDO, 1.2V SRAM LDO and 1.0V RF
LDO require two decoupling capacitors with typical values of 10uF and 2.2uF.
The parasitic offered by different
portions of the output path is illustrated in Figure 3-28. As shown in the image, the output path can be divided into four portions:
- Ball to first capacitor:RT1 and LT1 are the parasitic resistance and inductance offered by
the ball to the first capacitor lead.
- Along the first capacitor:ESL1 and ESR1 are the effective series inductance and resistance
of the first decoupling capacitor. RT2 and LT2 are the ground
trace resistance and inductance respectively of the first capacitor ground
trace.
- First capacitor lead to second capacitor lead:RTC2C and LTC2C are the resistance and inductance of the trace
between two capacitors.
- Along the second capacitor:ESL2 and ESR2 are the effective series inductance and resistance
of the second decoupling capacitor. RT3 and LT3 are the ground
trace resistance and inductance respectively of the second capacitor ground
trace.
Note: Both the capacitors are recommended to be placed close to
the respective ball.