TIDUFA8 November   2024

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 Terminology
    2. 1.2 Key System Specifications
  8. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Highlighted Products
      1. 2.2.1 IWRL6432
    3. 2.3 Design Considerations
      1. 2.3.1 Reference Design Features
    4. 2.4 IWRL6432 Reference Design Architecture
      1. 2.4.1 IWRL6432: BOM Optimized Design
        1. 2.4.1.1 Device Power Topology
      2. 2.4.2 Power Distribution Network
      3. 2.4.3 Internal LDOs
        1. 2.4.3.1 Enabling and Disabling Low Power Mode
        2. 2.4.3.2 1.4V Power Supplies: APLL and Synthesizer
          1. 2.4.3.2.1 APLL 1.4V
          2. 2.4.3.2.2 SYNTHESIZER 1.4V
        3. 2.4.3.3 1.2V Power Supplies
          1. 2.4.3.3.1 RF 1.2V Supply
        4. 2.4.3.4 RF 1.0V Power Supply
      4. 2.4.4 Component Selection
        1. 2.4.4.1 1.8V DC-DC Regulator
          1. 2.4.4.1.1 Need for Forced PWM Mode Switching
          2. 2.4.4.1.2 Importance of Spread Spectrum Clocking
        2. 2.4.4.2 3.3V Low Dropout Regulator
        3. 2.4.4.3 FLASH Memory
        4. 2.4.4.4 Crystal
  9. 3System Design Theory
    1. 3.1 Antenna Specification
      1. 3.1.1 Antenna Requirements
      2. 3.1.2 Antenna Orientation
      3. 3.1.3 Bandwidth and Return Loss
      4. 3.1.4 Antenna Gain Plots
    2. 3.2 Antenna Array
      1. 3.2.1 2D Antenna Array With 3D Detection Capability
      2. 3.2.2 1D Antenna Array With 2D Detection Capability
    3. 3.3 PCB
      1. 3.3.1 Via-in-Pad Elimination
      2. 3.3.2 Micro-Via Process Elimination
    4. 3.4 Configuration Parameters
      1. 3.4.1 Antenna Geometry
      2. 3.4.2 Range and Phase Compensation
      3. 3.4.3 Chirp Configuration
    5. 3.5 Schematic and Layout Design Conditions
      1. 3.5.1 Internal LDO Output Decoupling Capacitor and Layout Conditions for BOM Optimized Topology
        1. 3.5.1.1 Single-Capacitor Rail
          1. 3.5.1.1.1 1.2V Digital LDO
        2. 3.5.1.2 Two-Capacitor Rail
          1. 3.5.1.2.1 1.2V RF LDO
        3. 3.5.1.3 1.2V SRAM LDO
        4. 3.5.1.4 1.0V RF LDO
      2. 3.5.2 Best and non-Best Layout Practices
        1. 3.5.2.1 Decoupling Capacitor Placement
        2. 3.5.2.2 Ground Return Path
        3. 3.5.2.3 Trace Width of High Current Carrying Traces
        4. 3.5.2.4 Ground Plane Split
  10. 4Link Budget
  11. 5Hardware, Software, Testing Requirements and Test Results
    1. 5.1 Hardware Requirements
      1. 5.1.1 Connection to the USB to UART Bridges
      2. 5.1.2 USB Cable to Connect to Host PC
      3. 5.1.3 The Rx-Tx Attribution of RS232
    2. 5.2 Software Requirements
    3. 5.3 Test Scenarios
    4. 5.4 Test Results
      1. 5.4.1 Human Detection at 15 Meters in Boresight
      2. 5.4.2 Antenna Radiation Plots
      3. 5.4.3 Angle Estimation Accuracy in Azimuth Plane
      4. 5.4.4 Angle Resolution
  12. 6Design and Documentation Support
    1. 6.1 Design Files
      1. 6.1.1 Schematics
      2. 6.1.2 BOM
      3. 6.1.3 PCB Layout Recommendations
        1. 6.1.3.1 Layout Prints
    2. 6.2 Tools and Software
    3. 6.3 Documentation Support
    4. 6.4 Support Resources
    5. 6.5 Trademarks
  13. 7About the Authors

2.4.4.3 FLASH Memory

A QSPI flash memory is used to store the application image for the device.

The reference design uses the MX25R1635FZUIH0, a low cost and low power 16-MBIT flash memory that supports a wide range of input voltage of 1.65V-3.6V to support both of the 3.3V and 1.8V IO voltages of the reference design.

Table 2-9 compares the IWRL6432 device requirements for the flash memory and the supporting features of the MX25R1635F.

Table 2-9 IWRL6432 Device Requirements for the Flash Memory and the Supporting Features of MX25R1635FZUIH0
IWRL6432 Device Requirements for the Flash MemoryMX25R1635F Features
Clock frequency greater than or equal to 80MHzClock frequency 80MHz
Quad Enable (QE) bit for enabling QSPI data linesStatus register bit 6 is QE bit. Needs to be set to 1.
Supports SFDP commandSerial Flash Discoverable Parameters (SFDP) mode support
Wide input voltage range1.65V-3.6V operation voltage
Low power consumptionUltra Low Power Consumption

The reference design supports two different IO supply voltages of 3.3V and 1.8V. The wide range of input voltage support of the MX25U1632FZUI02 gives the reference design flexibility to perform in both the 3.3V and 1.8V power modes without need of replacement of the flash memory.

For specific use cases, where wide input voltage range is not required and the device only needs to be operated in 1.8V IO, MX25U1632FZUI02, operating in 1.65V to 2.0V can be used.

The Quad Enable (QE) bit of the status register (bit 6) needs be set to logic 1 to make the system function in four I/O mode. The value of QE bit in the status register can be written through write status register (WRSR) instruction.

Note:
  1. Refer to Flash Variants Supported by the mmWave Sensor for the flash variant compatibility.
  2. Proper pull up is required for D2, D3 and CS lines.
  3. If the data line lengths are larger (more than 4000mils), source termination resistors needs to be placed accordingly.