The purpose of this study is to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of the ADC168M102R-SEP, dual 16-bit analog-to-digital converter (ADC). Heavy- ions with an LET_EFF of 48MeV-cm²/mg were used to irradiate the devices with a fluence of 1 × 10⁷ ions/cm². The results demonstrate that the ADC168M102R-SEP is SEL-free up to LET_EFF = 48MeV-cm²/mg at 125°C.