The purpose of this study is to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of the OPA4H199-SEP, quad-channel 40-V, 4.5-MHz, rail-to-rail input and output (RRIO) operational amplifier. Heavy-ions with an LETEFF of 43 MeV-cm2/mg were used to irradiate the devices with a fluence of 1 × 107 ions/cm2. The results demonstrate that the OPA4H199-SEP is SEL-free up to LETEFF = 43 MeV-cm2/mg at 125°C.
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The OPA4H199-SEP is a quad-channel 40-V, 4.5-MHz, rail-to-rail input and output (RRIO) operational amplifier. The devices uses CMOS technology. The recommended operating voltage range is from 2.7 V to 40 V. The OPA4H199-SEP features mux-friendly inputs that allow for differential input voltages up to the supply voltage (open-loop configuration). The OPA4H199-SEP is available in a 14-pin SOT-23-THIN (DYY) package that offers space savings compared to other traditional leaded 14-pin package options.
http://www.ti.com/product/OPA4H199-SEP
| DESCRIPTION | DEVICE INFORMATION |
|---|---|
| TI Part Number | OPA4H199-SEP |
| MLS Number | OPA4H199MDYYTSEP |
| Device Function | Radiation Tolerant High-Voltage Quad-Channel Operational Amplifier |
| Technology | LBC9 |
| Exposure Facility | Radiation Effects Facility, Cyclotron Institute, Texas A&M University |
| Heavy Ion Fluence per Run | 1×106 – 1×107 ions/cm2 |
| Irradiation Temperature | 125°C (for SEL testing) |
The primary single-event effect (SEE) events of interest in the OPA4H199-SEP is the destructive single-event latch-up (SEL). From a risk/impact point-of-view, the occurrence of an SEL is potentially the most destructive SEE event and the biggest concern for space applications. The LBC9 process node was used for the OPA4H199-SEP. CMOS circuitry introduces a potential for SEL susceptibility. SEL can occur if excess current injection caused by the passage of an energetic ion is high enough to trigger the formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the p-sub and n-well and n+ and p+ contacts). The parasitic bipolar structure initiated by a single-event creates a high-conductance path (inducing a steady-state current that is typically orders-of-magnitude higher than the normal operating current) between power and ground that persists (is “latched”) until power is removed or until the device is destroyed by the high-current state. The process modifications applied for SEL-mitigation were sufficient as the OPA4H199-SEP exhibited no SEL with heavy-ions up to an LETEFF of 43 MeV-cm2/mg at a fluence of 107 ions/cm2 and a chip temperature of 125°C.
The OPA4H199-SEP was biased in a buffer configuration where V+ is set to 20 V and V- is set to -20 V. On all 4 channels, the inverting input was connected to the output. Current was monitored over time for both V+ and V-. Heavy ions with LETEFF = 43 MeV-cm2/mg were used to irradiate the devices. Flux of 105 ions/s-cm2 and fluence of 107 ions/cm2 were used during the exposure at 125°C temperature.
The OPA4H199-SEP is packaged in a 14-pin, SOT-23-THIN (DYY) package shown with pinout in Figure 3-1. Figure 3-2 shows the OPA4H199-SEP bias diagram.