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The TMUX582F-SEP is a modern 8:1 multiplexer suitable for single ended operation. This latch-up immune device offers robust overvoltage protection up to +60V making it optimal for harsh space environments. Additionally, this protection operates in powered-on, powered-off, and floating supply conditions.
During a fault such as an overvoltage event, the offending channel turns OFF and the Sx pin becomes high impedance. If this fault channel is selected, the drain (D) is pulled to the fault rail that is exceeded (Vfp or Vfn). All other Sx pins which are not under fault continue to operate normally. During normal operation, when the source (Sx) does not exceed Vfp or Vfn, the switch operates with low leakage, low capacitance and an ultra-flat on-resistance. This provides high performance signal integrity with minimal distortion.
Table 1-1 lists the device information used for TID characterization and qualification.
TID HDR/LDR Details: up to 30krad(Si) | |
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TI Device Number | TMUX582F-SEP |
Package | 20-pin PW (TSSOP) |
Technology | LBCSOI2 |
Die Lot Number | 3027068 |
A/T Lot Number and Date Code | 3766864ML3 / 3AA6XJK |
Quantity Tested | 20 irradiated devices + 4 control |
Lot Accept or Reject | Devices passed 30 krad(Si) |
HDR Radiation Facility | Texas Instruments CLAB in Dallas, Texas |
LDR Radation Facility | VPT in Chelmsford, Massachusetts |
HDR Dose Level | 10krad(Si), 20krad(Si), 30krad(Si) |
HDR Dose Rate | 191.178rad(Si)/s ionizing radiation |
LDR Dose Level | 10krad(Si), 20krad(Si), 30krad(Si) |
LDR Dose Rate | 9.94e-03rad(Si)/s ionizing radiation |
HDR Radiation Source | Gammacell 220 Excel (GC-220E) Co-60 |
LDR Radiation Source | Broad Beam facility consisting of a 16’ x 12’ radiation vault housing a cobalt-60 gamma beam irradiator |
Irradiation Temperature | Ambient, room temperature |
The TMUX582F-SEP samples were irradiated at a high dose rate of 191.178rad(Si)/s up to 30krad(Si) and then put through full electrical parametric testing on the production Automated Test Equipment (ATE). Additionally, other TMUX582F-SEP samples were irradiated at a low dose rate of 9.94e-03rad(Si)/s up to 30krad(Si) and then put through full electrical parametric testing on the production Automated Test Equipment (ATE). Both sample sets were functional and passed all electrical parametric tests with readings within data sheet electrical specification limits.
The TMUX582F-SEP LBCSOI2 process technology contains Bipolar and CMOS components. Both LDR and HDR were performed. Results showed that worst case values post-irradiation were still within pre-radiation specification limits for both HDR and LDR, hence no ELDRS effects were exhibited. Thus, HDR will be performed on each wafer lot for future RLAT testing.
In addition to the standard HDR and LDR characterization, other bias schemes were tested to verify max recommended operating voltages. Two different bias schemes were tested, one with the S1 pin set to a voltage of 22V and the second with the S1 pin set to a voltage of 60V to stress under a fault scenario. These extra bias schemes were radiated at 30krad under HDR conditions and the results show passing values for all parameters. For future RLAT requests, the 22V S1 pin bias plan will be used.
The TMUX582F-SEP LDR exposure was performed on biased and unbiased devices in a Co-60 gamma cell at VPT testing facilities in Chelmsford, Massachusetts. The un-attenuated dose rate of this cell is 9.94e-03 rad(Si)/s. After exposure, the devices were shipped back to Texas Instruments and full post radiation electrical evaluation using Texas Instruments ATE was conducted and shipped back to VPT within a 72 hour window. ATE test limits are set per data sheet electrical limits based on qualification and characterization data.
The TMUX582F-SEP HDR exposure was performed on biased devices in a Co-60 gamma cell at a TI facility in Dallas, Texas. The un-attenuated dose rate of this cell is 191.178rad(Si)/s. After exposure, the devices were packed in dry ice (per MIL-STD-883 Method 1019.9 section 3.10) and full post radiation electrical evaluation using Texas Instruments ATE was conducted. ATE test limits are set per data sheet electrical limits based on qualification and characterization data. Post radiation measurements were taken within 30 minutes of removing the devices from the dry ice container. The devices were allowed to reach room temperature prior to electrical post radiation measurements.
The devices were tested in biased conditions as described in the following sections.
Figure 2-1 shows the bias conditions for each pin during the standard HDR and LDR characterization. Figure 2-2 shows the bias conditions for each pin during the 22V RLAT characterization at 30krad. Figure 2-3 shows the bias conditions for each pin during a 60V fault condition.
The main HDR and LDR irradiation characterization was performed at 10krad, 20krad and 30krad. The units that were irradiated to 30krad(Si) were annealed at 25ºC for 72 hours. ATE parametric testing was completed before and after the anneal.
The extra 22V S1 pin HDR stress was performed at 30krad without the need for anneal and will be the RLAT specification bias for each wafer lot going forward. The extra 60V S1 pin HDR stress was also performed at 30krad without the need for anneal. This extra case was added to test the device under a fault scenario.
Control Group | HDR = 191.178 rad(Si)/s | |||
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Total Samples: 4 | Total Samples: 5 Biased / TID Level | |||
Exposure Levels | ||||
0krad(Si) | 10krad(Si) | 20krad(Si) | 30krad(Si) | |
Biased | Biased | Biased | Biased | Biased + 72 hour anneal |
1 - 4 | 5 - 9 | 10 - 14 | 15 - 19 | 20 - 24 |
Control Group | LDR = 9.94e-03 rad(Si)/s | ||
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Total Samples: 4 | Total Samples: 5 Biased | ||
Exposure Levels | |||
0krad(Si) | 10krad(Si) | 20krad(Si) | 30krad(Si) |
Biased | Biased | Biased | Biased |
1 - 4 | 5 - 9 | 10 - 14 | 15 - 19 |