SLPS444C July   2013  – January 2016 CSD18563Q5A

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q5A Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q5A Tape and Reel Information

1 Features

  • Ultra-Low Qg and Qgd
  • Soft Body Diode for Reduced Ringing
  • Low Thermal Resistance
  • Avalanche Rated
  • Logic Level
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5 mm × 6 mm Plastic Package

2 Applications

  • Low-Side FET for Industrial Buck Converter
  • Secondary Side Synchronous Rectifier
  • Motor Control

3 Description

This 5.7 mΩ, 60 V SON 5 mm × 6 mm NexFET™ power MOSFET was designed to pair with the CSD18537NQ5A control FET and act as the sync FET for a complete industrial buck converter chipset solution.

Top View
CSD18563Q5A P0093-01_LPS198.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 60 V
Qg Gate Charge Total (10 V) 15.0 nC
Qgd Gate Charge Gate-to-Drain 2.9 nC
RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V 8.6 mΩ
VGS = 10 V 5.7 mΩ
VGS(th) Threshold Voltage 2.0 V

.
Ordering Information(1)

DEVICE MEDIA QTY PACKAGE SHIP
CSD18563Q5A 13-Inch Reel 2500 SON 5 × 6 mm
Plastic Package		 Tape and Reel
CSD18563Q5AT 7-Inch Reel 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 60 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package limited) 100 A
Continuous Drain Current (Silicon limited), TC = 25°C 93
Continuous Drain Current(1) 15
IDM Pulsed Drain Current(2) 251 A
PD Power Dissipation(1) 3.2 W
Power Dissipation, TC = 25°C 116
TJ,
Tstg 		Operating Junction Temperature,
Storage Temperature 		–55 to 150 °C
EAS Avalanche Energy, single pulse
ID = 54 A, L = 0.1 mH, RG = 25 Ω		 146 mJ
  1. Typical RθJA = 40°C/W on a 1 inch2, 2 oz. Cu pad on a 0.06 inch thick FR4 PCB.
  2. Max RθJC = 1.3°C/W, pulse duration ≤100 μs, duty cycle ≤1%.

RDS(on) vs VGS

CSD18563Q5A graph07p2_SLPS444.png

Gate Charge

CSD18563Q5A graph04_SLPS444.png