UCC21732-Q1 Automotive 10A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI
UCC21732-Q1 Automotive 10A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI
UCC21732-Q1 Automotive 10A Source/Sink Reinforced Isolated Single Channel Gate Driver for
SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI
1 Features
5.7kVRMS single
channel isolated gate driver
AEC-Q100 qualified for automotive applications
Device temperature grade
1: –40°C to +125°C ambient operating temperature range
Device HBM ESD
classification level 3A
Device CDM ESD
classification level C3
SiC MOSFETs and IGBTs up to
2121Vpk
33V maximum output drive voltage
(VDD-VEE)
±10A drive strength and
split output
150V/ns minimum CMTI
270ns response time fast
overcurrent protection
External active miller clamp
Internal 2-level turn-off
when fault happens
Isolated analog sensor with
PWM output for
Temperature sensing with
NTC, PTC or thermal diode
High voltage DC-Link or
phase voltage
Alarm
FLT on over current and reset from
RST/EN
Fast enable/disable response
on RST/EN
Reject <40ns noise
transient and pulse on input pins
12V VDD UVLO with power good on
RDY
Inputs/outputs with
over/under-shoot transient voltage Immunity up to 5V
130ns (maximum) propagation delay
and 30ns (maximum) pulse/part skew
SOIC-16 DW package with creepage
and clearance distance > 8mm
Operating junction temperature
–40°C to 150°C
Safety-related certifications:
8000VPK
VIOTM and 2121VPK VIORM Reinforced
Isolation per DIN EN IEC 60747-17 (VDE 0884-17)