The purpose of this study is to characterize the single-event effects (SEE) performance due to heavy-ion irradiation of the TPS7H1121-SP. Heavy-ions with LETEFF of 75MeV·cm2/mg were used to irradiate 9 total (6 pre-production and 3 production) devices. Flux of 5.08 x 104 to 1.07 x 105 ions/cm2 ·s and fluence of ≈107 ions/cm2 per run were used for the characterization. The results demonstrated that the TPS7H1121-SP is SEL-free up to 75MeV·cm2/mg at T = 125°C and SEB/SEGR free up to 75MeV·cm2/mg at T = 25°C. Output signals including VOUT (3% window), PG (edge trigger at 500mV below nominal), and SS (edge trigger at 20% below nominal) were monitored to check for transients and or SEFIs. The device showed to be SET and SEFI free up to 75MeV·cm2/mg at T = 25°C.
All trademarks are the property of their respective owners.
The TPS7H1121-SP is a radiation-hardened, low-dropout linear regulator (LDO) which operates over a wide input voltage range and is optimized for powering devices in a space environment. The device is capable of sourcing up to 2A over a 2.25V to 14V input. SEE testing on this device was completed with both pre-production and production units. Pre-production units refer to P-type symbolized units that have not completed Texas Instrument's Space Enhanced Product (SEP) qualification flow.
The device offers excellent stability and features a programmable current limit with a wide adjustment range. To support the complex power requirements of FPGAs, DSPs, and micro-controllers, the TPS7H1121-SP provides enable on and off functionality, programmable soft start, and a power good open-drain output.
The device is offered in a 22-pin ceramic package. General device information and test conditions are listed in Table 1-1. For more detailed technical specifications, user-guides, and application notes please go to TPS7H1121-SP product page.
DESCRIPTION(1) | DEVICE INFORMATION |
---|---|
TI Part Number | TPS7H1121-SP |
Orderable Number | 5962R2320301VXC |
Device Function | Low-dropout Regulator |
Technology | LBC7 (Linear BiCMOS 7) |
Exposure Facility | Facility for Rare Istotope Beams, Michigan State University (20.3 MeV/nucleon) and Radiation Effects Facility, Cyclotron Institute, Texas A&M University (15 MeV/nucleon) |
Heavy Ion Fluence per Run | 1.00 × 107 ions/cm2 |
Irradiation Temperature | 25°C (for SEB/SEGR testing), 25°C (for SET testing), and 125°C (for SEL testing) |