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  • TPD4S014 USB Charger Port Protection Including ESD Protection for All Lines and Overvoltage Protection on VBUS

    • SLVSAU0G May   2011  – December 2015 TPD4S014

      PRODUCTION DATA.  

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  • TPD4S014 USB Charger Port Protection Including ESD Protection for All Lines and Overvoltage Protection on VBUS
  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics, EN, ACK, D+, D-, ID Pins
    6. 6.6 Electrical Characteristics OVP Circuits
    7. 6.7 Supply Current Consumption
    8. 6.8 Thermal Shutdown Feature
    9. 6.9 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input Voltage Protection at VBUS up to 28 V DC
      2. 7.3.2 Low RON nFET Switch
      3. 7.3.3 ESD Performance D+/D-/ID/VBUS Pins
      4. 7.3.4 Overvoltage and Undervoltage Lockout Features
      5. 7.3.5 Capacitance TVS ESD Clamp for USB2.0 Hi-Speed Data Rate
      6. 7.3.6 Start-up Delay
      7. 7.3.7 OVP Glitch Immunity
      8. 7.3.8 Integrated Input Enable and Status Output Signal
      9. 7.3.9 Thermal Shutdown
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 For Non-OTG USB Systems
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 For OTG USB Systems
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Community Resources
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information
  13. IMPORTANT NOTICE
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DATA SHEET

TPD4S014 USB Charger Port Protection Including ESD Protection for All Lines and Overvoltage Protection on VBUS

1 Features

  • Input Voltage Protection at VBUS up to 28 V
  • Low Ron nFET Switch
  • Supports > 2 A Charging Current
  • ESD Performance D+/D–/ID/VBUS Pins:
    • ±15-kV Contact Discharge (IEC 61000-4-2)
    • ±15-kV Air Gap Discharge (IEC 61000-4-2)
  • Overvoltage and Undervoltage Lockout Features
  • Low Capacitance TVS ESD Clamp for USB2.0 High Speed Data Rate
  • Internal 17 ms Startup Delay
  • Integrated Input Enable and Status Output Signal
  • Thermal Shutdown Feature
  • Space Saving SON Package (2 mm × 2 mm)

2 Applications

  • Cell Phones
  • eBook
  • Portable Media Players
  • Digital Camera

3 Description

The TPD4S014 is a single-chip solution for USB charger port protection. This device offers low capacitance transient voltage suppressor (TVS) electrostatic discharge (ESD) clamps for the D+, D–, and standard capacitance for the ID pin. On the VBUS pin, this device provides overvoltage protection (OVP) up to 28 V DC. The overvoltage lockout feature ensures that if there is a fault condition at the VBUS line, the TPD4S014 is able to isolate the VBUS line to protect the internal circuitry from damage. There is a 17-ms turn-on delay after VBUS rises above the undervoltage lockout (UVLO) threshold in order to let the voltage stabilize before turning the nFET on. This function acts as a de-glitch and prevents unnecessary switching if there is any ringing on the line during connection.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
TPD4S014 WSON (10) 2.00 mm x 2.00 mm
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Simplified Block Diagram

TPD4S014 app_dia_lvsau0.gif

4 Revision History

Changes from F Revision (September 2015) to G Revision

  • Added a frequency test condition to capacitance in the Electrical Characteristics table. Go

Changes from E Revision (June 2014) to F Revision

  • Corrected VDROP on nFET under loadGo

Changes from D Revision (April 2014) to E Revision

  • Updated Recommended Operating Conditions table. Go
  • Changed terminal name to ILEAK from ILGo
  • Updated Electrical Characteristics OVP Circuits table.Go
  • Changed tON MAX value from 18 ms to 22ms Go
  • Changed tOFF 8 µs value from MAX to TYP.Go
  • Changed td(OVP) 11 µs value from MAX to TYP.Go
  • Changed tREC MAX value from 9 ms to 10.5 ms. Go
  • Updated Application and Implementation section. Go

Changes from C Revision (December 2011) to D Revision

  • Added ESD Ratings table.Go
  • Added Recommended Operating Conditions table.Go
  • Added Thermal Information table. Go
  • Updated Electrical Characteristics OVP Circuits table.Go

Changes from B Revision (October 2011) to C Revision

  • Made changes to the datasheet to tighten the parameters, VOP+ changed from 5.55 V to 5.9 V.Go
  • Updated Description.Go

Changes from A Revision (June 2011) to B Revision

  • Changed name of VCC to VBUSOUT throughout the entire document.Go
  • Deleted row from Device Operation table.Go
  • Added Eye Diagrams to Typical Characteristics section.Go

 
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