The TPS22918 is a single-channel load switch with configurable rise time and configurable quick output discharge. The device contains an N-channel MOSFET that can operate over an input voltage range of 1 V to 5.5 V and can support a maximum continuous current of 2 A. The switch is controlled by an on and off input, which is capable of interfacing directly with low-voltage control signals.
The configurable rise time of the device greatly reduces inrush current caused by large bulk load capacitances, thereby reducing or eliminating power supply droop. The TPS22918 features a configurable quick output discharge (QOD) pin, which controls the fall time of the device to allow design flexibility for power down and sequencing.
The TPS22918 is available in a small, leaded SOT-23 package (DBV) which allows visual inspection of solder joints. The device is characterized for operation over the free-air temperature range of –40°C to +105°C.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
TPS22918 | SOT-23 (6) | 2.90 mm × 1.60 mm |
Changes from A Revision (March 2016) to B Revision
Changes from B Revision (June 2016) to C Revision
Changes from * Revision (February 2016) to A Revision
PIN | I/O | DESCRIPTION | |
---|---|---|---|
NO. | NAME | ||
1 | VIN | I | Switch input. Place ceramic bypass capacitor(s) between this pin and GND. See the Detailed Description section for more information. |
2 | GND | — | Device ground. |
3 | ON | I | Active high switch control input. Do not leave floating. |
4 | CT | O | Switch slew rate control. Can be left floating. See the Feature Description section for more information. |
5 | QOD | O | Quick Output Discharge pin. This functionality can be enabled in one of three ways.
|
6 | VOUT | O | Switch output. |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VIN | Input voltage | –0.3 | 6 | V |
VOUT | Output voltage | –0.3 | 6 | V |
VON | ON voltage | –0.3 | 6 | V |
IMAX | Maximum continuous switch current, ambient temperature = 70°C | 2 | A | |
IPLS | Maximum pulsed switch current, pulse < 300 µs, 2% duty cycle | 2.5 | A | |
TJ | Maximum junction temperature | 125 | °C | |
Tstg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) | ±1000 |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VIN | Input voltage | 0 | 5.5 | V | |
VON | ON voltage | 0 | 5.5 | V | |
VOUT | Output voltage | VIN | V | ||
VIH, ON | High-level input voltage, ON | VIN = 1 V to 5.5 V | 1 | 5.5 | V |
VIL, ON | Low-level input voltage, ON | VIN = 1 V to 5.5 V | 0 | 0.5 | V |
TA | Operating free-air temperature(1) | –40 | 105 | °C | |
CIN | Input Capacitor | 1 (2) | µF |
THERMAL METRIC (1) | TPS22918 | UNIT | |
---|---|---|---|
DBV (SOT-23) | |||
6 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 183.2 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 151.6 | °C/W |
RθJB | Junction-to-board thermal resistance | 34.1 | °C/W |
ψJT | Junction-to-top characterization parameter | 37.2 | °C/W |
ψJB | Junction-to-board characterization parameter | 33.6 | °C/W |
PARAMETER | TEST CONDITIONS | TA | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|---|
IQ, VIN | Quiescent current | VON = 5 V, IOUT = 0 A | VIN = 5.5 V | –40°C to +105°C | 9.2 | 16 | µA | |
VIN = 5 V | 8.7 | 16 | ||||||
VIN = 3.3 V | 8.3 | 15 | ||||||
VIN = 1.8 V | 10.2 | 17 | ||||||
VIN = 1.2 V | 9.3 | 16 | ||||||
VIN = 1 V | 8.9 | 15 | ||||||
ISD, VIN | Shutdown current | VON = 0 V, VOUT = 0 V | VIN = 5.5 V | –40°C to +105°C | 0.5 | 5 | µA | |
VIN = 5 V | 0.5 | 4.5 | ||||||
VIN = 3.3 V | 0.5 | 3.5 | ||||||
VIN = 1.8 V | 0.5 | 2.5 | ||||||
VIN = 1.2 V | 0.4 | 2 | ||||||
VIN = 1 V | 0.4 | 2 | ||||||
ION | ON pin input leakage current | VIN = 5.5 V, IOUT = 0 A | –40°C to +105°C | 0.1 | µA | |||
RON | On-Resistance | VIN = 5.5 V, IOUT = –200 mA | 25°C | 51 | 59 | mΩ | ||
–40°C to +85°C | 71 | |||||||
–40°C to +105°C | 78 | |||||||
VIN = 5.0 V, IOUT = –200 mA | 25°C | 52 | 59 | mΩ | ||||
–40°C to +85°C | 71 | |||||||
–40°C to +105°C | 79 | |||||||
VIN = 4.2 V, IOUT = –200 mA | 25°C | 52 | 59 | mΩ | ||||
–40°C to +85°C | 71 | |||||||
–40°C to +105°C | 79 | |||||||
VIN = 3.3 V, IOUT = –200 mA | 25°C | 53 | 59 | mΩ | ||||
–40°C to +85°C | 71 | |||||||
–40°C to +105°C | 80 | |||||||
VIN = 2.5 V, IOUT = –200 mA | 25°C | 53 | 61 | mΩ | ||||
–40°C to +85°C | 75 | |||||||
–40°C to +105°C | 80 | |||||||
VIN = 1.8 V, IOUT = –200 mA | 25°C | 55 | 65 | mΩ | ||||
–40°C to +85°C | 79 | |||||||
–40°C to +105°C | 88 | |||||||
VIN = 1.2 V, IOUT = –200 mA | 25°C | 64 | 77 | mΩ | ||||
–40°C to +85°C | 88 | |||||||
–40°C to +105°C | 104 | |||||||
VIN = 1.0 V, IOUT = –200 mA | 25°C | 71 | 85 | mΩ | ||||
–40°C to +85°C | 100 | |||||||
–40°C to +105°C | 116 | |||||||
VHYS | ON pin hysteresis | VIN = 1 V to 5.5 V | –40°C to +105°C | 107 | mV | |||
RPD | Output pull down resistance(1) | VIN = 5.0 V, VON = 0 V | 25°C | 24 | Ω | |||
–40°C to +105°C | 30 | |||||||
VIN = 3.3 V, VON = 0 V | 25°C | 25 | ||||||
–40°C to +105°C | 35 | |||||||
VIN = 1.8 V, VON = 0 V | 25°C | 45 | ||||||
–40°C to +105°C | 60 |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VIN = 5 V | ||||||
tON | Turn-on time | RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF | 1950 | µs | ||
tOFF | Turn-off time | RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF | 2 | |||
tR | VOUT rise time | RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF | 2540 | |||
tF | VOUT fall time | RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF | 2 | |||
tD | Delay time | RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF | 690 | |||
VIN = 3.3 V | ||||||
tON | Turn-on time | RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF | 1430 | µs | ||
tOFF | Turn-off time | RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF | 2 | |||
tR | VOUT rise time | RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF | 1680 | |||
tF | VOUT fall time | RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF | 2 | |||
tD | Delay time | RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF | 590 | |||
VIN = 1.8 V | ||||||
tON | Turn-on time | RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF | 965 | µs | ||
tOFF | Turn-off time | RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF | 2 | |||
tR | VOUT rise time | RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF | 960 | |||
tF | VOUT fall time | RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF | 2 | |||
tD | Delay time | RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF | 480 | |||
VIN = 1 V | ||||||
tON | Turn-on time | RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF | 725 | µs | ||
tOFF | Turn-off time | RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF | 3 | |||
tR | VOUT rise time | RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF | 560 | |||
tF | VOUT fall time | RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF | 2 | |||
tD | Delay time | RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF | 430 |
VON = 5 V | IOUT = 0 A |
VON = 5 V | IOUT = –200 mA |
VON = 5 V | TA = 25°C |
VIN = VOUT | VON = 0 V |
VON = 0 V | IOUT = 0 A |
VON = 5 V | IOUT = –200 mA |
IOUT = 0 A |
CIN = 1 µF | RL = 10 Ω | CL = 0.1 µF |
CT = 1000 pF |
CIN = 1 µF | RL = 10 Ω | CL = 0.1 µF | QOD = Open |
CIN = 1 µF | RL = 10 Ω | CL = 0.1 µF |
CT = 1000 pF |
VIN = 5 V | CIN = 1 µF | CL = 0.1 µF |
RL = 10 Ω | QOD = Open |
VIN = 3.3 V | CIN = 1 µF | CL = 0.1 µF |
RL = 10 Ω | QOD = Open |
VIN = 1.8 V | CIN = 1 µF | CL = 0.1 µF |
RL = 10 Ω | QOD = Open |
VIN = 1.0 V | CIN = 1 µF | CL = 0.1 µF |
RL = 10 Ω | QOD = Open |
CIN = 1 µF | RL = 10 Ω | CL = 0.1 µF |
CIN = 1 µF | RL = 10 Ω | CL = 0.1 µF |
VIN = 5 V | CIN = 1 µF | CL = 0.1 µF |
RL = 10 Ω | CT = 1000 pF |
VIN = 3.3 V | CIN = 1 µF | CL = 0.1 µF |
RL = 10 Ω | CT = 1000 pF |
VIN = 1.8 V | CIN = 1 µF | CL = 0.1 µF |
RL = 10 Ω | CT = 1000 pF |
VIN = 1.0 V | CIN = 1 µF | CL = 0.1 µF |
RL = 10 Ω | CT = 1000 pF |