TPS7H60X5-SEP Single-Event Effects (SEE) Report

Abstract

The purpose of this study is to characterize the single-event effects (SEE) performance due to heavy-ion irradiation of the TPS7H6005-SEP, TPS7H6015-SEP, and TPS7H6025-SEP. Heavy-ions with LET_EFF of 48 MeV × cm²/mg was used to irradiate twelve production devices. Flux of approximately 10⁵ ions/cm²×s and fluence of approximately 10⁷ ions/cm² per run were used for the characterization. The results demonstrate the performance of the TPS7H60x5-SEP under SEL and SEB and SEGR conditions at T = 125°C and T = 25°C, respectively. SET transients performance for output pulse width excursions ≥ |20%| from the nominal width and positive and negative edge transients on HO and LO are presented and discussed.

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1 Introduction

The TPS7H60X5-SEP is a radiation-hardness-assured (RHA) Gallium Nitride (GaN) Field Effect Transistor (FET) gate driver designed for high frequency, high efficiency applications. The driver features:

Absolute Maximum Voltage ratings
- TPS7H6005-SEP: 200V
- TPS7H6015-SEP: 60V
- TPS7H6025-SEP: 22V
Adjustable dead time (PWM mode)
Approximately 30ns propagation delay
Approximately 5.5ns high-side and low-side matching
High-side and low-side 5V LDOs independent of supply voltage
Two control input modes: Independent Input Mode (IIM) and PWM
- IIM allows for outputs to be controlled by dedicated input
- PWM allows for two complementary outputs signals to be generated from single input with resistor programmable dead-time

In IIM mode the user also has the ability to enable or disable the turn-on of both outputs when both inputs are on simultaneously (interlock protection). This gives the driver the ability to be used in multiple converter configurations.

The device is offered in a 56-pin plastic package. General device information and test conditions are listed in Table 1-1. For more detailed technical specifications, user guides, and application notes, see the TPS7H6005-SEP, the TPS7H6015-SEP, or the TPS7H6025-SEP product pages.

Table 1-1 Overview Information

Description⁽¹⁾	Device Information
TI part number	TPS7H6005-SEP, TPS7H6015-SEP, TPS7H6025-SEP
Orderable number	TPS7H6005MDCATSEP, TPS7H6015MDCATSEP, TPS7H6025MDCATSEP
Device function	200, 60, or 22V half-bridge eGaN gate driver
Technology	LBC7 (Linear BiCMOS 7)
Exposure facility	Radiation Effects Facility, Facility for Rare Isotope Beams, Michigan State University (25 MeV/nucleon) & Cyclotron Facility, Texas A&M University (15 MeV/nucleon)
Heavy ion fluence per run	~1 × 10⁷ ions / cm²
Irradiation temperature	25°C (for SEB/SEGR testing), 25°C (for SET testing), and 125°C (for SEL testing)

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