This report discusses the radiation characterization results of the TMS570LC4357-SEP ARM Cortex-R based microcontroller. The study was done to determine Total Ionizing Dose (TID) effects under low dose rate (LDR, unbiased) and high dose rate (HDR, biased) conditions. All samples passed post-irradiation electrical tests within the specified data sheet limits up to 30krad(Si) LDR and HDR. TID effects on ADC (Analog to Digital Converter) and Flash Memory Program and Erase Cycles are shown at differing HDR (High Dose Rate, biased) conditions. This report also functions as the RLAT report for TI lot number (2009899ADT).
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The TMS570LC4357-SEP is a high-performance Arm® Cortex® R-based microcontroller that features on-chip diagnostic features, including dual CPUs in lockstep, Built-In Self-Test (BIST) logic for CPU, the N2HET coprocessors, and for on-chip SRAMs, as well as ECC protection on the L1 caches, L2 flash, and SRAM memories. The device supports ECC or parity protection on peripheral memories and loopback capability on peripheral I/Os.
The TMS570LC4357 device features 4MB of integrated flash and 512KB of data RAM with single-bit error and double-bit error detection. The flash memory on this device is a nonvolatile, electrically erasable, and programmable memory implemented with a 64-bit-wide data bus interface. The flash operates on a 3.3V supply input (the same level as the I/O supply) for all read, program, and erase operations. The SRAM supports read and write accesses in byte, halfword, and word modes.
The device integrates two ARM Cortex-R5F floating-point CPUs, operating in lockstep, which offer 1.66 DMIPS/MHz and can run up to 300MHz, providing up to 498DMIPS. The device supports the big-endian (BE32) format.
With integrated safety features and a wide choice of communication and control peripherals, the TMS570LC4357-SEP device is designed for high-performance real-time control applications with safety-critical requirements.
For more information, see the product page.
| Description | Device Information |
|---|---|
| TI Device Number | TMS570LC4357-SEP |
| Package | 337 GWT (nFBGA) |
| Die Lot Number | 6021835ADT; 2009899ADT |
| A/T Lot Number / Date Code | 7378840 / 78AICXW; 2529561PHI / 2AC99TW |
| Quantity Tested | 29 irradiated devices |
| Lot Accept/Reject | Devices passed up to 30 krad(Si) |
| HDR Radiation Facility | Aeroflex RADs, Colorado Springs, CO; TI CLAB, Dallas, TX |
| HDR Dose Level | Aeroflex
(Three units): 3 krad(Si) = TI CLAB (20 units): 10krad(Si), 20krad(Si), 30krad(Si), 40krad(Si) |
| HDR Dose Rate | Aeroflex: 65
rad(Si)/sec TI CLAB: 188 rad(Si)/sec |
| HDR Radiation Source | Gammacell 220 Excel (GC-220E) Co-60 |
| LDR Radiation Facility | Aeroflex RADs, Colorado Springs, CO |
| LDR Dose Level | 20krad(Si), 30krad(Si) |
| LDR Dose Rate | .01rad(Si) / s |
| LDR Radiation Source | Gammacell JLSA 81-24 Co-60 |
| Irradiation Temperature | Ambient (room temperature) |