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  • 1.6-kW, Bidirectional Micro Inverter Based on GaN Reference Design

    • TIDUF63A December   2023  – June 2024

       

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  • 1.6-kW, Bidirectional Micro Inverter Based on GaN Reference Design
  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 PV or Battery Input With DC/DC Converter
    2. 1.2 Isolation and CLLLC Converter
    3. 1.3 DC/AC Converter
    4. 1.4 Key System Specifications
  8. 2System Design Theory
    1. 2.1 Boost Converter Design
    2. 2.2 MPPT Operation
    3. 2.3 CLLLC Converter Design
      1. 2.3.1 Achieving Zero Voltage Switching (ZVS)
      2. 2.3.2 Resonant Tank Design
    4. 2.4 DC/AC Converter Design
  9. 3System Overview
    1. 3.1 Block Diagram
    2. 3.2 Design Considerations
      1. 3.2.1 DC/DC Converter
        1. 3.2.1.1 Input Current and Voltage Senses and MPPT
        2. 3.2.1.2 Inrush Current Limit
      2. 3.2.2 CLLLC Converter
        1. 3.2.2.1 Low-Voltage Side
        2. 3.2.2.2 High-Voltage Side
        3. 3.2.2.3 Modulation scheme
      3. 3.2.3 DC/AC Converter
        1. 3.2.3.1 Active Components Selection
          1. 3.2.3.1.1 High-Frequency FETs: GaN FETs
          2. 3.2.3.1.2 Isolated Power Supply
          3. 3.2.3.1.3 Low-Frequency FETs
        2. 3.2.3.2 Passive Components Selection
          1. 3.2.3.2.1 Boost Inductor Selection
          2. 3.2.3.2.2 Cx Capacitance Selection
          3. 3.2.3.2.3 EMI Filter Design
          4. 3.2.3.2.4 DC-Link Output Capacitance
        3. 3.2.3.3 Voltage and Current Measurements
    3. 3.3 Highlighted Products
      1. 3.3.1  TMDSCNCD280039C - TMS320F280039C Evaluation Module C2000™ MCU controlCARD™
      2. 3.3.2  LMG3522R050 - 650-V 50-mΩ GaN FET With Integrated Driver
      3. 3.3.3  LMG2100R044 - 100-V, 35-A GaN Half-Bridge Power Stage
      4. 3.3.4  TMCS1123 - Precision Hall-Effect Current Sensor
      5. 3.3.5  AMC1302 - Precision, ±50-mV Input, Reinforced Isolated Amplifier
      6. 3.3.6  AMC3330 - Precision, ±1-V Input, Reinforced Isolated Amplifier With Integrated DC/DC Converter
      7. 3.3.7  AMC1311 - High-Impedance, 2-V Input, Reinforced Isolated Amplifier
      8. 3.3.8  ISO6741 - General-Purpose Reinforced Quad-Channel Digital Isolators with Robust EMC
      9. 3.3.9  UCC21540 - Reinforced Isolation Dual-Channel Gate Driver
      10. 3.3.10 LM5164 - 100-V Input, 1-A Synchronous Buck DC/DC Converter with Ultra-low IQ
  10. 4Hardware, Software, Testing Requirements, and Test Results
    1. 4.1 Hardware Requirements
    2. 4.2 Test Setup
      1. 4.2.1 DC/DC Test
      2. 4.2.2 DC/AC Test
    3. 4.3 Test Results
      1. 4.3.1 Input DC/DC Boost Results
      2. 4.3.2 CLLLC Results
      3. 4.3.3 DC/AC Results
  11. 5Design and Documentation Support
    1. 5.1 Design Files
      1. 5.1.1 Schematics
      2. 5.1.2 BOM
    2. 5.2 Tools and Software
    3. 5.3 Documentation Support
    4. 5.4 Support Resources
    5. 5.5 Trademarks
  12. 6About the Author
  13. 7Revision History
  14. IMPORTANT NOTICE
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Design Guide

1.6-kW, Bidirectional Micro Inverter Based on GaN Reference Design

Description

This reference design implements a four-channel 1.6-kW single-phase bidirectional micro inverter based on GaN. The reference design supports four identical channels with up to 60 V and ±14 A on the DC side. These channels can be connected to photovoltaic (PV) panels or to 48-V Battery Energy Storage Systems (BESS). On the High-Voltage (HV) side, the reference design is connected to a single-phase AC grid. The reference design has Low-Voltage (LV) and HV sides isolated by means of a bidirectional fixed-frequency CLLLC converter. The control algorithm for the reference design is implemented in C2000™ MCU.

Resources

TIDA-010933 Design Folder
LMG2100R044, LMG3522R050 Product Folder
TMCS1123, AMC3330 Product Folder
AMC1311, ISO6741, UCC21540 Product Folder
TMDSCNCD280039C Tool Folder
TIDA-010933 Ask our TI E2E™ support experts

Features

  • Four channels for PV or 48-V BESS connection
  • High power density, up to 1 kW/L
  • Bidirectional power flow capable and reactive power compensation
  • Digital control implemented in single controller: TMS320F280039C
  • Industrial temperature range (–40°C to +85°C)

 

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