Refer to the PDF data sheet for device specific package drawings
The LM3290, with its companion IC LM3291, is an RF envelope supply modulator (EM) with integrated DC-DC boost converter optimized for Envelope Tracking (ET) RF power amplifiers (PAs). The device enables maximum transmit output power independent of the input battery voltage (battery as low as 2.5 V) and is controlled by the MIPI® RFFE 1.1.
The LM3290 operates in two active modes:
Active Mode 1: For low TX output power, LM3290 may operate in Average Power Tracking (APT) mode, providing a static, but programmable, output voltage to supply the PA. At light load and in APT mode, the LM3290 enters into Pulse Frequency Mode (PFM) operation automatically and operates with reduced switching frequency. In PFM mode, the quiescent current is reduced, which extends the battery life.
Active Mode 2: In ET mode, the LM3290 with LM3291 efficiently provides a dynamic, high-bandwidth supply voltage for the PA to maximize total EM + PA efficiency. The envelope modulator follows the envelope reference input signal delivered by the RFIC to the LM3291 via a differential analog input. The output is a single-ended power supply signal to the PA.
The LM3290 and LM3291 support 3G, as well as LTE operation up to 20-MHz signal bandwidth.
The LM3290 controls the LM3291 companion-IC through direct control signals, and no additional controls are needed from the system. Shutdown, standby, and idle modes turn the EM off and reduce battery current consumption.
For the full datasheet, samples, or the EVM hardware and software please contact a TI representative at ET@list.ti.com.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
LM3290 | DSBGA (30) | 2.432 mm x 2.808 mm |
MIPI is a registered trademark of Mobile Industry Processor Interface Alliance.
All other trademarks are the property of their respective owners.
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms and definitions.