LM5102 High-Voltage Half-Bridge Gate Driver With Programmable Delay
1 Features
- Drives Both a High-Side and Low-Side N-Channel MOSFET
- Independently Programmable High and Low Side Rising Edge Delay
- Bootstrap Supply Voltage Range up to 118 V dc
- Fast Turn-Off Propagation Delay (25 ns Typical)
- Drives 1000-pF Loads with 15-ns Rise and Fall Times
- Supply Rail Undervoltage Lockout
- Low Power Consumption
- Timer Can Be Terminated Midway Through Sequence
2 Applications
- Current Fed Push-Pull Power Converters
- Half and Full Bridge Power Converters
- Synchronous Buck Converters
- Two Switch Forward Power Converters
- Forward with Active Clamp Converters
3 Description
The LM5102 high-voltage gate driver is designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with supply voltages up to 100 V. The outputs are independently controlled. The rising edge of each output can be independently delayed with a programming resistor. An integrated high voltage diode is provided to charge the high side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from control logic to the high side gate driver. Undervoltage lockout is provided on both the low side and the high side power rails. This device is available in the standard VSSOP 10 pin and the WSON 10 pin packages.
Device Information(1)
| PART NUMBER | PACKAGE | BODY SIZE (NOM) |
|---|---|---|
| LM5102 | VSSOP (10) | 3.00 mm × 3.00 mm |
| WSON (10) | 4.00 mm × 4.00 mm |
- For all available packages, see the orderable addendum at the end of the data sheet.
Simplified Block Diagram
4 Revision History
Changes from A Revision (March 2013) to B Revision
- Added Handling Rating table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section. Go
Changes from * Revision (March 2013) to A Revision
- Changed layout of National Data Sheet to TI formatGo
5 Pin Configuration and Functions
Pin Functions
| PIN | TYPE(2) | DESCRIPTION | APPLICATION INFORMATION | |
|---|---|---|---|---|
| NAME | WSON(1), VSSOP |
|||
| HB | 2 | P | High-side gate driver bootstrap rail | Connect the positive terminal of bootstrap capacitor to the HB pin and connect negative terminal of bootstrap capacitor to HS. The Bootstrap capacitor should be placed as close to IC as possible. |
| HI | 7 | I | High-side driver control input | TTL compatible thresholds. Unused inputs should be tied to ground and not left open. |
| HO | 3 | O | High-side gate driver output | Connect to gate of high-side MOSFET with short low-inductance path. |
| HS | 4 | P | High-side MOSFET source connection | Connect bootstrap capacitor negative terminal and source of high side MOSFET. |
| LI | 8 | I | Low-side driver control input | TTL compatible thresholds. Unused inputs should be tied to ground and not left open. |
| LO | 10 | O | Low-side gate driver output | Connect to the gate of the low side MOSFET with a short low inductance path. |
| RT1 | 5 | A | High-side output edge delay programming | Resistor from RT1 to ground programs the leading edge delay of the high side gate driver. The resistor should be placed close to the IC to minimize noise coupling from adjacent traces. |
| RT2 | 6 | A | Low-side output edge delay programming | Resistor from RT2 to ground programs the leading edge delay of the low side gate driver. The resistor should be placed close to the IC to minimize noise coupling from adjacent traces. |
| VDD | 1 | P | Positive gate drive supply | Locally decouple to VSS using low ESR/ESL capacitor, located as close to IC as possible. |
| VSS | 9 | G | Ground return | All signals are referenced to this ground. |
