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LMG1210 200-V, 1.5-A, 3-A half-bridge MOSFET and GaN FET driver with adjustable dead time for applications up to 50 MHz
SNOSD12D
November 2018 – January 2019
LMG1210
PRODUCTION DATA.
CONTENTS
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LMG1210 200-V, 1.5-A, 3-A half-bridge MOSFET and GaN FET driver with adjustable dead time for applications up to 50 MHz
1
Features
2
Applications
3
Description
Device Images
Simplified Typical Application
4
Revision History
5
Pin Configuration and Functions
Pin Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Electrical Characteristics
6.6
Switching Characteristics
6.7
Typical Characteristics
6.8
Timing Diagrams
7
Detailed Description
7.1
Overview
7.2
Functional Block Diagram
7.3
Feature Description
7.3.1
Bootstrap Diode Operation
7.3.2
LDO Operation
7.3.3
Dead Time Selection
7.3.4
Overtemperature Protection
7.3.5
High-Performance Level Shifter
7.3.6
Negative HS Voltage Handling
7.4
Device Functional Modes
8
Application and Implementation
8.1
Application Information
8.2
Typical Application
8.2.1
Design Requirements
8.2.2
Detailed Design Procedure
8.2.2.1
Bypass Capacitor
8.2.2.2
Bootstrap Diode Selection
8.2.2.3
Handling Ground Bounce
8.2.2.4
Independent Input Mode
8.2.2.5
Computing Power Dissipation
8.2.3
Application Curves
8.3
Do's and Don'ts
9
Power Supply Recommendations
10
Layout
10.1
Layout Guidelines
10.2
Layout Example
11
Device and Documentation Support
11.1
Documentation Support
11.1.1
Related Documentation
11.2
Receiving Notification of Documentation Updates
11.3
Community Resources
11.4
Trademarks
11.5
Electrostatic Discharge Caution
11.6
Glossary
12
Mechanical, Packaging, and Orderable Information
IMPORTANT NOTICE
Package Options
Mechanical Data (Package|Pins)
RVR|19
Thermal pad, mechanical data (Package|Pins)
Orderable Information
snosd12d_oa
snosd12d_pm
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DATA SHEET
LMG1210 200-V, 1.5-A, 3-A half-bridge MOSFET and GaN FET driver with adjustable dead time for applications up to 50 MHz
1
Features
Up to 50-MHz operation
10-ns typical propagation delay
3.4-ns high-side to low-side matching
Minimum pulse width of 4 ns
Two control input options
Single PWM input with adjustable dead time
Independent input mode
1.5-A peak source and 3-A peak sink currents
External bootstrap diode for flexibility
Internal LDO for adaptability to voltage rails
High 300-V/ns CMTI
HO to LO capacitance less than 1 pF
UVLO and overtemperature protection
Low-inductance WQFN package