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Data Sheet
LMG342xR030
600V 30mΩ GaN FET With Integrated Driver,
Protection, and Temperature Reporting
1 Features
- Qualified for JEDEC JEP180 for hard-switching topologies
- 600V GaN-on-Si FET with integrated gate driver
- Integrated high precision
gate bias voltage
- 200V/ns FET hold-off
- 2.2MHz
switching frequency
- 20V/ns to 150V/ns slew rate for
optimization of switching performance and EMI mitigation
- Operates from 7.5V to 18V
supply
- Robust protection
- Cycle-by-cycle overcurrent and latched short-circuit
protection with < 100ns response
- Withstands 720V surge while hard-switching
- Self-protection from
internal overtemperature and UVLO monitoring
- Advanced power management
- Digital temperature PWM
output
- LMG3426R030 includes zero-voltage
detection (ZVD) feature that facilitates soft-switching converters
- LMG3427R030 includes
zero-current detection (ZCD) feature that facilitates soft-switching
converters

