LMG365xR070 650V 70mΩ GaN FET With Integrated Driver and Protection

1 Features

650V 70mΩ GaN power FET with integrated gate driver
- >200V/ns FET hold-off
- Adjustable slew rates for optimization of switching performance and EMI mitigation
  - 10V/ns to 100V/ns turn-on slew rates
  - 10V/ns to full speed turn-off slew rates
- Operates with supply pin and input logic pin voltage range from 9V to 26V
Robust Protection
- Cycle-by-cycle overcurrent and latched short-circuit protection with <300ns response
- Withstands 720V surge while hard-switching
- Self-protection from internal overtemperature and UVLO monitoring
9.8mm × 11.6mm TOLL package witht thermal pad