TLC2272AM-MIL Advanced LinCMOS Rail-to-Rail Operational Amplifier
- SLOS984 June 2017 TLC2272AM-MIL
  
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DATA SHEET

TLC2272AM-MIL Advanced LinCMOS Rail-to-Rail Operational Amplifier

1 Features

Output Swing Includes Both Supply Rails
Low Noise: 9 nV/√Hz Typical at f = 1 kHz
Low-Input Bias Current: 1-pA Typical
Fully-Specified for Both Single-Supply and Split-Supply Operation
Common-Mode Input Voltage Range Includes Negative Rail
High-Gain Bandwidth: 2.2-MHz Typical
High Slew Rate: 3.6-V/μs Typical
Low Input Offset Voltage: 2.5 mV Maximum at T_A = 25°C
Macromodel Included
Performance Upgrades for the TLC272 and TLC274
Available in Q-Temp Automotive

2 Applications

White Goods (Refrigerators, Washing Machines)
Hand-held Monitoring Systems
Configuration Control and Print Support
Transducer Interfaces
Battery-Powered Applications

3 Description

The TLC2272AM-MIL device is a dual operational amplifier from Texas Instruments. The device exhibits rail-to-rail output performance for increased dynamic range in single- or split-supply applications. The TLC2272AM-MIL device offers 2 MHz of bandwidth and 3 V/μs of slew rate for higher-speed applications. Thee device offers comparable ac performance while having better noise, input offset voltage, and power dissipation than existing CMOS operational amplifiers. The TLC2272AM-MIL device has a noise voltage of 9 nV/√Hz, two times lower than competitive solutions.

The TLC2272AM-MIL device, exhibiting high input impedance and low noise, is excellent for small-signal conditioning for high-impedance sources such as piezoelectric transducers. Because of the micropower dissipation levels, the device works well in hand-held monitoring and remote-sensing applications. In addition, the rail-to-rail output feature, with single- or split-supplies, makes this device a great choice when interfacing with analog-to-digital converters (ADCs). For precision applications, the TLC2272AM-MIL device is available with a maximum input offset voltage of 950 μV. This device is fully characterized at 5 V and ±5 V.

The TLC2272AM-MIL device also makes a great upgrade to the TLC272 in standard designs, offering increased output dynamic range, lower noise voltage, and lower input offset voltage. This enhanced feature set allows the device to be used in a wider range of applications. For applications that require higher output drive and wider input voltage range, see the TLV2432 and TLV2442 devices.

If the design requires single amplifiers, see the TLV2211, TLV2221 and TLV2231 family. These devices are single rail-to-rail operational amplifiers in the SOT-23 package. Their small size and low power consumption make them ideal for high density, battery-powered equipment.

Device Information⁽¹⁾

PART NUMBER	PACKAGE	BODY SIZE (NOM)
TLC2272AM-MIL	SOIC (8)	3,91 mm × 4,90 mm
	CDIP (8)	6,67 mm × 9,60 mm
	LCCC (20)	8,89 mm × 8,89 mm
	CFP (10)	6,35 mm × 6,35 mm

For all available packages, see the orderable addendum at the end of the data sheet.

Maximum Peak-to-Peak Output Voltage vs
Supply Voltage

4 Revision History

DATE	REVISION	NOTE
June 2017	*	Initial release

Changes from * Revision (June 2017) to * Revision

5 Pin Configuration and Functions

D or JG Package

8-Pin SOIC or CDIP

Top View

FK Package

20-Pin LCCC

Top View

NC – No internal connection

U Package

10-Pin CFP

Top View

NC – No internal connection

Pin Functions

PIN				I/O	DESCRIPTION
NAME	NO.
NAME	D or JG	FK	U
1IN+	3	7	4	I	Non-inverting input, Channel 1
1IN–	2	5	3	I	Inverting input, Channel 1
1OUT	1	2	2	O	Output, Channel 1
2IN+	5	12	6	I	Non-inverting input, Channel 2
2IN–	6	15	7	I	Inverting input, Channel 2
2OUT	7	17	8	O	Output, Channel 2
V_DD+	8	20	9	—	Positive (highest) supply
V_DD–	—	—	—	—	Negative (lowest) supply
V_DD–/GND	4	10	5	—	Negative (lowest) supply
NC	—	1, 3, 4, 6, 8, 9, 11, 13, 14, 16, 18, 19	1, 10	—	No connection

6 Specifications

6.1 Absolute Maximum Ratings

over operating ambient temperature range (unless otherwise noted)⁽¹⁾

	MIN	MAX	UNIT
Supply voltage, V_DD+⁽²⁾		8	V
V_DD–⁽²⁾	–8		V
Differential input voltage, V_ID⁽³⁾		±16	V
Input voltage, V_I (any input)⁽²⁾	V_DD− − 0.3	V_DD+	V
Input current, I_I (any input)		±5	mA
Output current, I_O		±50	mA
Total current into V_DD+		±50	mA
Total current out of V_DD–		±50	mA
Duration of short-circuit current at (or below) 25°C⁽⁴⁾	Unlimited
Operating ambient temperature range, T_A	–55	125
Storage temperature, T_stg	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values, except differential voltages, are with respect to the midpoint between V_DD+ and V_DD–.

(3) Differential voltages are at IN+ with respect to IN–. Excessive current will flow if input is brought below V_DD– – 0.3 V.

(4) The output may be shorted to either supply. Temperature or supply voltages must be limited to ensure that the maximum dissipation rating is not exceeded.

6.2 ESD Ratings

				VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per AEC Q100-002⁽¹⁾	Devices in D packages	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per AEC Q100-011	Devices in D packages	±1000	V

(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

		MIN	MAX	UNIT
V_DD±	Supply voltage	±2.2	±8	V
V_I	Input voltage	V_DD−	V_DD+ − 1.5	V
V_IC	Common-mode input voltage	V_DD−	V_DD+ − 1.5	V
T_A	Operating ambient temperature	–55	125	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TLC2272AM-MIL				UNIT
		D (SOIC)	JG (CDIP)	FK (LCCC)	U (CFP)
		8-PIN		20-PIN	10-PIN
R_θJA	Junction-to-ambient thermal resistance ⁽²⁾⁽³⁾	115.6		—	—	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance ⁽²⁾⁽³⁾	61.8		18	121.3	°C/W
R_θJB	Junction-to-board thermal resistance	55.9		—	—	°C/W
ψ_JT	Junction-to-top characterization parameter	14.3		—	—	°C/W
ψ_JB	Junction-to-board characterization parameter	55.4		—	—	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	—		—	8.68	°C/W

(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.

(2) Maximum power dissipation is a function of T_J(max), R_θJA, and T_A. The maximum allowable power dissipation at any allowable ambient temperature is P_D = (T_J(max) − T_A) / R_θJA. Operating at the absolute maximum T_J of 150°C can affect reliability.

(3) The package thermal impedance is calculated in accordance with JESD 51-7 (plastic) or MIL-STD-883 Method 1012 (ceramic).

6.5 TLC2272AM-MIL Electrical Characteristics V_DD = 5 V

at specified ambient temperature, V_DD = 5 V; T_A = 25°C, unless otherwise noted.

PARAMETER		TEST CONDITIONS			MIN	TYP	MAX	UNIT
V_IO	Input offset voltage	V_IC = 0 V, V_DD± = ±2.5 V, V_O = 0 V, R_S = 50 Ω		T_A = 25°C		300	950	µV
V_IO	Input offset voltage	V_IC = 0 V, V_DD± = ±2.5 V, V_O = 0 V, R_S = 50 Ω		T_A = –55°C to 125°C			1500	µV
α_VIO	Temperature coefficient of input offset voltage	V_IC = 0 V, V_DD± = ±2.5 V, V_O = 0 V, R_S = 50 Ω				2		μV/°C
	Input offset voltage long-term drift⁽¹⁾	V_IC = 0 V, V_DD± = ±2.5 V, V_O = 0 V, R_S = 50 Ω				0.002		μV/mo
I_IO	Input offset current	V_IC = 0 V, V_DD± = ±2.5 V, V_O = 0 V, R_S = 50 Ω		T_A = 25°C		0.5	60	pA
I_IO	Input offset current	V_IC = 0 V, V_DD± = ±2.5 V, V_O = 0 V, R_S = 50 Ω		T_A = –55°C to 125°C			800	pA
I_IB	Input bias current	V_IC = 0 V, V_DD± = ±2.5 V, V_O = 0 V, R_S = 50 Ω		T_A = 25°C		1	60	pA
I_IB	Input bias current	V_IC = 0 V, V_DD± = ±2.5 V, V_O = 0 V, R_S = 50 Ω		T_A = –55°C to 125°C			800	pA
V_ICR	Common-mode input voltage	R_S = 50 Ω; \|V_IO \| ≤ 5 mV		T_A = 25°C	–0.3	2.5	4	V
V_ICR	Common-mode input voltage	R_S = 50 Ω; \|V_IO \| ≤ 5 mV		T_A = –55°C to 125°C	0	2.5	3.5	V
V_OH	High-level output voltage	I_OH = –20 μA				4.99		V
		I_OH = –200 μA		T_A = 25°C	4.85	4.93
		I_OH = –200 μA		T_A = –55°C to 125°C	4.85
		I_OH = –1 mA		T_A = 25°C	4.25	4.65
		I_OH = –1 mA		T_A = –55°C to 125°C	4.25
V_OL	Low-level output voltage	V_IC = 2.5 V	I_OL = 50 μA			0.01		V
			I_OL = 500 μA	T_A = 25°C		0.09	0.15
			I_OL = 500 μA	T_A = –55°C to 125°C			0.15
			I_OL = 5 mA	T_A = 25°C		0.9	1.5
			I_OL = 5 mA	T_A = –55°C to 125°C			1.5
A_VD	Large-signal differential voltage amplification	V_IC = 2.5 V, V_O = 1 V to 4 V, R_L = 10 kΩ⁽²⁾		T_A = 25°C	10	35		V/mV
		V_IC = 2.5 V, V_O = 1 V to 4 V, R_L = 10 kΩ⁽²⁾		T_A = –55°C to 125°C	10
		V_IC = 2.5 V, V_O = 1 V to 4 V; R_L = 1 MΩ⁽²⁾				175
r_id	Differential input resistance					10¹²		Ω
r_i	Common-mode input resistance					10¹²		Ω
c_i	Common-mode input capacitance	f = 10 kHz, P package				8		pF
z_o	Closed-loop output impedance	f = 1 MHz, A_V = 10				140		Ω
CMRR	Common-mode rejection ratio	V_IC = 0 V to 2.7 V, V_O = 2.5 V, R_S = 50 Ω		T_A = 25°C	70	75		dB
CMRR	Common-mode rejection ratio	V_IC = 0 V to 2.7 V, V_O = 2.5 V, R_S = 50 Ω		T_A = –55°C to 125°C	70			dB
k_SVR	Supply-voltage rejection ratio (ΔV_DD / ΔV_IO)	V_DD = 4.4 V to 16 V, V_IC = V_DD / 2, no load		T_A = 25°C	80	95		dB
k_SVR	Supply-voltage rejection ratio (ΔV_DD / ΔV_IO)	V_DD = 4.4 V to 16 V, V_IC = V_DD / 2, no load		T_A = –55°C to 125°C	80			dB
I_DD	Supply currrent	V_O = 2.5 V, no load		T_A = 25°C		2.2	3	mA
I_DD	Supply currrent	V_O = 2.5 V, no load		T_A = –55°C to 125°C			3	mA
SR	Slew rate at unity gain	V_O = 0.5 V to 2.5 V, R_L = 10 kΩ⁽²⁾, C_L = 100 pF⁽²⁾		T_A = 25°C	2.3	3.6		V/µs
SR	Slew rate at unity gain	V_O = 0.5 V to 2.5 V, R_L = 10 kΩ⁽²⁾, C_L = 100 pF⁽²⁾		T_A = –55°C to 125°C	1.7			V/µs
V_n	Equivalent input noise voltage	f = 10 Hz				50		nV/√Hz
V_n	Equivalent input noise voltage	f = 1 kHz				9		nV/√Hz
V_NPP	Peak-to-peak equivalent input noise voltage	f = 0.1 Hz to 1 Hz				1		µV
V_NPP	Peak-to-peak equivalent input noise voltage	f = 0.1 Hz to 10 Hz				1.4		µV
I_n	Equivalent input noise current					0.6		fA/√Hz
THD+N	Total harmonic distortion + noise	V_O = 0.5 V to 2.5 V, f = 20 kHz, R_L = 10 kΩ⁽²⁾		A_V = 1		0.0013%
				A_V = 10		0.004%
				A_V = 100		0.03%
	Gain-bandwidth product	f = 10 kHz, R_L = 10 kΩ⁽²⁾, C_L = 100 pF⁽²⁾				2.18		MHz
B_OM	Maximum output-swing bandwidth	V_O(PP) = 2 V, A_V = 1, R_L = 10 kΩ⁽²⁾, C_L = 100 pF⁽²⁾				1		MHz
t_s	Settling time	A_V = –1, R_L = 10 kΩ⁽²⁾, Step = 0.5 V to 2.5 V, C_L = 100 pF⁽²⁾		To 0.1%		1.5		µs
t_s	Settling time			To 0.01%		2.6		µs
φ_m	Phase margin at unity gain	R_L = 10 kΩ⁽²⁾, C_L = 100 pF⁽²⁾				50		°
	Gain margin	R_L = 10 kΩ⁽²⁾, C_L = 100 pF⁽²⁾				10		dB

(1) Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at T_A = 150°C extrapolated to T_A = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.

(2) Referenced to 0 V.

6.6 TLC2272AM-MIL Electrical Characteristics V_DD± = ±5 V

at specified ambient temperature, V_DD± = ±5 V; T_A = 25°C, unless otherwise noted.

PARAMETER		TEST CONDITIONS			MIN	TYP	MAX	UNIT
V_IO	Input offset voltage	V_IC = 0 V, V_O = 0 V, R_S = 50 Ω		T_A = 25°C		300	950	µV
V_IO	Input offset voltage	V_IC = 0 V, V_O = 0 V, R_S = 50 Ω		T_A = –55°C to 125°C			1500	µV
α_VIO	Temperature coefficient of input offset voltage	V_IC = 0 V, V_O = 0 V, R_S = 50 Ω				2		μV/°C
	Input offset voltage long-term drift⁽¹⁾	V_IC = 0 V, V_O = 0 V, R_S = 50 Ω				0.002		μV/mo
I_IO	Input offset current	V_IC = 0 V, V_O = 0 V, R_S = 50 Ω		T_A = 25°C		0.5	60	pA
I_IO	Input offset current	V_IC = 0 V, V_O = 0 V, R_S = 50 Ω		T_A = –55°C to 125°C			800	pA
I_IB	Input bias current	V_IC = 0 V, V_O = 0 V, R_S = 50 Ω		T_A = 25°C		1	60	pA
I_IB	Input bias current	V_IC = 0 V, V_O = 0 V, R_S = 50 Ω		T_A = –55°C to 125°C			800	pA
V_ICR	Common-mode input voltage	R_S = 50 Ω; \|V_IO \| ≤ 5 mV		T_A = 25°C	–5.3	0	4	V
V_ICR	Common-mode input voltage	R_S = 50 Ω; \|V_IO \| ≤ 5 mV		T_A = –55°C to 125°C	–5	0	3.5	V
V_OM+	Maximum positive peak output voltage	I_O = –20 μA				4.99		V
		I_O = –200 μA		T_A = 25°C	4.85	4.93
		I_O = –200 μA		T_A = –55°C to 125°C	4.85
		I_O = –1 mA		T_A = 25°C	4.25	4.65
		I_O = –1 mA		T_A = –55°C to 125°C	4.25
V_OM–	Maximum negative peak output voltage	V_IC = 0 V,	I_O = 50 μA			–4.99		V
			I_O = 500 μA	T_A = 25°C	–4.85	–4.91
			I_O = 500 μA	T_A = –55°C to 125°C	–4.85
			I_O = 5 mA	T_A = 25°C	–3.5	–4.1
			I_O = 5 mA	T_A = –55°C to 125°C	–3.5
A_VD	Large-signal differential voltage amplification	V_O = ±4 V; R_L = 10 kΩ		T_A = 25°C	20	50		V/mV
		V_O = ±4 V; R_L = 10 kΩ		T_A = –55°C to 125°C	20
		V_O = ±4 V; R_L = 1 MΩ				300
r_id	Differential input resistance					10¹²		Ω
r_i	Common-mode input resistance					10¹²		Ω
c_i	Common-mode input capacitance	f = 10 kHz, P package				8		pF
z_o	Closed-loop output impedance	f = 1 MHz, A_V = 10				130		Ω
CMRR	Common-mode rejection ratio	V_IC = –5 V to 2.7 V, V_O = 0 V, R_S = 50 Ω		T_A = 25°C	75	80		dB
CMRR	Common-mode rejection ratio	V_IC = –5 V to 2.7 V, V_O = 0 V, R_S = 50 Ω		T_A = –55°C to 125°C	75			dB
k_SVR	Supply-voltage rejection ratio (ΔV_DD / ΔV_IO)	V_DD+ = 2.2 V to ±8 V, V_IC = 0 V, no load		T_A = 25°C	80	95		dB
k_SVR	Supply-voltage rejection ratio (ΔV_DD / ΔV_IO)	V_DD+ = 2.2 V to ±8 V, V_IC = 0 V, no load		T_A = –55°C to 125°C	80			dB
I_DD	Supply currrent	V_O = 0 V, no load		T_A = 25°C		2.4	3	mA
I_DD	Supply currrent	V_O = 0 V, no load		T_A = –55°C to 125°C			3	mA
SR	Slew rate at unity gain	V_O = ±2.3 V, R_L = 10 kΩ, C_L = 100 pF		T_A = 25°C	2.3	3.6		V/µs
SR	Slew rate at unity gain	V_O = ±2.3 V, R_L = 10 kΩ, C_L = 100 pF		T_A = –55°C to 125°C	1.7			V/µs
V_n	Equivalent input noise voltage	f = 10 Hz				50		nV/√Hz
V_n	Equivalent input noise voltage	f = 1 kHz				9		nV/√Hz
V_NPP	Peak-to-peak equivalent input noise voltage	f = 0.1 Hz to 1 Hz				1		µV
V_NPP	Peak-to-peak equivalent input noise voltage	f = 0.1 Hz to 10 Hz				1.4		µV
I_n	Equivalent input noise current					0.6		fA/√Hz
THD+N	Total harmonic distortion + noise	V_O = ±2.3, f = 20 kHz, R_L = 10 kΩ		A_V = 1		0.0011%
				A_V = 10		0.004%
				A_V = 100		0.03%
	Gain-bandwidth product	f = 10 kHz, R_L = 10 kΩ, C_L = 100 pF				2.25		MHz
B_OM	Maximum output-swing bandwidth	V_O(PP) = 4.6 V, A_V = 1, R_L = 10 kΩ, C_L = 100 pF				0.54		MHz
t_s	Settling time	A_V = –1, R_L = 10 kΩ, Step = –2.3 V to 2.3 V, C_L = 100 pF		To 0.1%		1.5		µs
t_s	Settling time	A_V = –1, R_L = 10 kΩ, Step = –2.3 V to 2.3 V, C_L = 100 pF		To 0.01%		3.2		µs
φ_m	Phase margin at unity gain	R_L = 10 kΩ, C_L = 100 pF				52		°
	Gain margin	R_L = 10 kΩ, C_L = 100 pF				10		dB

6.7 Typical Characteristics

Table 1. Table of Graphs

			FIGURE⁽¹⁾
V_IO	Input offset voltage	Distribution	1, 2
V_IO	Input offset voltage	vs Common-mode voltage	3, 4
α_VIO	Input offset voltage temperature coefficient	Distribution	5, 6 ⁽²⁾
I_IB / I_IO	Input bias and input offset current	vs ambient temperature	7⁽²⁾
V_I	Input voltage	vs Supply voltage	8
V_I	Input voltage	vs ambient temperature	9⁽²⁾
V_OH	High-level output voltage	vs High-level output current	10⁽²⁾
V_OL	Low-level output voltage	vs Low-level output current	11, 12⁽²⁾
V_OM+	Maximum positive peak output voltage	vs Output current	13⁽²⁾
V_OM-	Maximum negative peak output voltage	vs Output current	14⁽²⁾
V_O(PP)	Maximum peak-to-peak output voltage	vs Frequency	15
I_OS	Short-circuit output current	vs Supply voltage	16
I_OS	Short-circuit output current	vs ambient temperature	17⁽²⁾
V_O	Output voltage	vs Differential input voltage	18, 19
A_VD	Large-signal differential voltage amplification	vs Load resistance	20
	Large-signal differential voltage amplification and phase margin	vs Frequency	21, 22
	Large-signal differential voltage amplification	vs ambient temperature	23⁽²⁾, 24⁽²⁾
z₀	Output impedance	vs Frequency	25, 26
CMRR	Common-mode rejection ratio	vs Frequency	27
CMRR	Common-mode rejection ratio	vs ambient temperature	28
k_SVR	Supply-voltage rejection ratio	vs Frequency	29, 30
k_SVR	Supply-voltage rejection ratio	vs ambient temperature	31⁽²⁾
I_DD	Supply current	vs Supply voltage	32⁽²⁾, ⁽²⁾
I_DD	Supply current	vs ambient temperature	33⁽²⁾, ⁽²⁾
SR	Slew rate	vs Load Capacitance	34
SR	Slew rate	vs ambient temperature	35⁽²⁾
V_O	Inverting large-signal pulse response		36, 37
	Voltage-follower large-signal pulse response		38, 39
	Inverting small-signal pulse response		40, 41
	Voltage-follower small-signal pulse response		42, 43
V_n	Equivalent input noise voltage	vs Frequency	44, 45
	Noise voltage over a 10-second period		46
	Integrated noise voltage	vs Frequency	47
THD+N	Total harmonic distortion + noise	vs Frequency	48
	Gain-bandwidth product	vs Supply voltage	49
	Gain-bandwidth product	vs ambient temperature	50⁽²⁾
φ_m	Phase margin	vs Load capacitance	51
	Gain margin	vs Load capacitance	52

(1) For all graphs where V_DD = 5 V, all loads are referenced to 2.5 V.

(2) Data at high and low temperatures are applicable only within the rated operating ambient temperature range of the device.

Figure 1. Distribution of Input Offset Voltage

Figure 3. Input Offset Voltage vs Common-Mode Voltage

Figure 5. Distribution of Amplifiers vs
Input Offset Voltage Temperature Coefficient

Figure 7. Input Bias and Input Offset Current vs
Ambient Temperature

Figure 9. Input Voltage vs Ambient Temperature

Figure 11. Low-Level Output Voltage vs
Low-Level Output Current

Figure 13. Maximum Positive Peak Output Voltage vs
Output Current

Figure 15. Maximum Peak-to-Peak Output Voltage vs
Frequency

Figure 17. Short-Circuit Output Current vs
Ambient Temperature

Figure 19. Output Voltage vs Differential Input Voltage

Figure 21. Large-Signal Differential Voltage Amplification and Phase Margin vs Frequency

Figure 23. Large-Signal Differential Voltage Amplification vs Ambient Temperature

Figure 25. Output Impedance vs Frequency

Figure 27. Common-Mode Rejection Ratio vs Frequency

Figure 29. Supply-Voltage Rejection Ratio vs Frequency

Figure 31. Supply-Voltage Rejection Ratio vs
Ambient Temperature

Figure 33. Supply Current vs Ambient Temperature

Figure 35. Slew Rate vs Ambient Temperature

Figure 37. Inverting Large-Signal Pulse Response

Figure 39. Voltage-Follower Large-Signal Pulse Response

Figure 41. Inverting Small-Signal Pulse Response

Figure 43. Voltage-Follower Small-Signal Pulse Response

Figure 45. Equivalent Input Noise Voltage vs Frequency

Figure 47. Integrated Noise Voltage vs Frequency

Figure 49. Gain-Bandwidth Product vs Supply Voltage

Figure 51. Phase Margin vs Load Capacitance

Figure 2. Distribution of Input Offset Voltage

Figure 4. Input Offset Voltage vs Common-Mode Voltage

Figure 6. Distribution of Amplifiers vs
Input Offset Voltage Temperature Coefficient

Figure 8. Input Voltage vs Supply Voltage

Figure 10. High-Level Output Voltage vs
High-Level Output Current

Figure 12. Low-Level Output Voltage vs
Low-Level Output Current

Figure 14. Maximum Negative Peak Output Voltage vs
Output Current

Figure 16. Short-Circuit Output Current vs Supply Voltage

Figure 18. Output Voltage vs Differential Input Voltage

Figure 20. Large-Signal Differential Voltage Amplification vs
Load Resistance

Figure 22. Large-Signal Differential Voltage Amplification and Phase Margin vs Frequency

Figure 24. Large-Signal Differential Voltage Amplification vs Ambient Temperature

Figure 26. Output Impedance vs Frequency

Figure 28. Common-Mode Rejection Ratio vs
Ambient Temperature

Figure 30. Supply-Voltage Rejection Ratio vs Frequency

Figure 32. Supply Current vs Supply Voltage

Figure 34. Slew Rate vs Load Capacitance

Figure 36. Inverting Large-Signal Pulse Response

Figure 38. Voltage-Follower Large-Signal Pulse Response

Figure 40. Inverting Small-Signal Pulse Response

Figure 42. Voltage-Follower Small-Signal Pulse Response

Figure 44. Equivalent Input Noise Voltage vs Frequency

Figure 46. Noise Voltage Over a 10-Second Period

Figure 48. Total Harmonic Distortion + Noise vs Frequency

Figure 50. Gain-Bandwidth Product vs Ambient Temperature

Figure 52. Gain Margin vs Load Capacitance

7 Detailed Description

7.1 Overview

The TLC2272AM-MIL device is a rail-to-rail output operational amplifier. The device operates from a 4.4-V to 16-V single supply or ±2.2-V to ±8-V dual supply, is unity-gain stable, and is suitable for a wide range of general-purpose applications.

7.2 Functional Block Diagram

Table 2. Device Component Count⁽¹⁾

COMPONENT	COUNT
Transistors	38
Resistors	26
Diodes	9
Capacitors	3

(1) Includes both amplifiers and all ESD, bias, and trim circuitry.

7.3 Feature Description

The TLC2272AM-MIL device features 2-MHz bandwidth and voltage noise of 9 nV/√Hz with performance rated from 4.4 V to 16 V across a temperature range of –40°C to 125°C. LinMOS suits a wide range of audio, automotive, industrial, and instrumentation applications.

7.4 Device Functional Modes

The TLC2272AM-MIL device is powered on when the supply is connected. The device may operate with single or dual supply, depending on the application. The device is in its full-performance mode once the supply is above the recommended value.