SBOS943E
February 2019 – August 2021
TLV9101
,
TLV9102
,
TLV9104
PRODUCTION DATA
1
Features
2
Applications
3
Description
4
Revision History
5
Pin Configuration and Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information for Single Channel
6.5
Thermal Information for Dual Channel
6.6
Thermal Information for Quad Channel
6.7
Electrical Characteristics
6.8
Typical Characteristics
7
Detailed Description
7.1
Overview
7.2
Functional Block Diagram
7.3
Feature Description
7.3.1
EMI Rejection
7.3.2
Phase Reversal Protection
7.3.3
Thermal Protection
7.3.4
Capacitive Load and Stability
7.3.5
Common-Mode Voltage Range
7.3.6
Electrical Overstress
7.3.7
Overload Recovery
7.3.8
Typical Specifications and Distributions
7.3.9
Packages With an Exposed Thermal Pad
7.3.10
Shutdown
7.4
Device Functional Modes
8
Application and Implementation
8.1
Application Information
8.2
Typical Applications
8.2.1
High Voltage Precision Comparator
8.2.1.1
Design Requirements
8.2.1.2
Detailed Design Procedure
8.2.1.3
Application Curve
9
Power Supply Recommendations
10
Layout
10.1
Layout Guidelines
10.2
Layout Example
11
Device and Documentation Support
11.1
Device Support
11.1.1
Development Support
11.1.1.1
TINA-TI (Free Software Download)
11.2
Documentation Support
11.2.1
Related Documentation
11.3
Receiving Notification of Documentation Updates
11.4
Support Resources
11.5
Trademarks
11.6
Electrostatic Discharge Caution
11.7
Glossary
12
Mechanical, Packaging, and Orderable Information
Package Options
Mechanical Data (Package|Pins)
D|8
MSOI002K
DSG|8
MPDS308C
DGS|10
MPDS035C
PW|8
MPDS568
RUG|10
MPQF216A
DGK|8
MPDS028E
DDF|8
MPDS569D
Thermal pad, mechanical data (Package|Pins)
DSG|8
QFND141I
RUG|10
QFND221
Orderable Information
sbos943e_oa
sbos943e_pm
1
Features
Rail-to-rail input and output
Wide bandwidth: 1.1-MHz GBW
Low quiescent current: 120 µA per amplifier
Low offset voltage: ±300 µV
Low offset voltage drift: ±0.6 µV/°C
Low noise: 28 nV/√
Hz
at 10 kHz
High common-mode rejection: 110 dB
Low bias current: ±10 pA
High slew rate: 4.5 V/µs
Wide supply: ±1.35 V to ±8 V, 2.7 V to 16 V
Robust EMIRR performance: 77 dB at 1.8 GHz