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Data Sheet
TPS7H3302-SP and TPS7H3302-SEP 3-A DDR Radiation Hardened Termination Regulator
1 Features
- QMLP TPS7H3302-SP standard
microcircuit drawing (SMD) available, 5962R14228
- Space Ehanced Plastic Vendor item
drawing available, VID V62/22615
- Total ionizing dose (TID) charactericized
- Radiation hardness
assured (RHA) qualified up to total ionizing dose (TID) 100 krad(Si) or
50 krad(Si)
- Single-Event Effects (SEE) Charactericized
- Single event latch-up
(SEL), single event gate rupture (SEGR), single event burnout (SEB)
immune up to LET = 70 MeV-cm2 /mg
- Single event transient
(SET), single event functional interrupt (SEFI), and single event upset
(SEU) characterized up to 70 MeVcm2 /mg
- Supports DDR, DDR2, DDR3, DDR3L, and DDR4 termination applications
- Input voltage: supports a 2.5-V and 3.3-V
rail
- Separate low-voltage input (VLDOIN) down to
0.9 V for improved power efficiency - 3-A sink and source termination regulator
- Enable input and power-good output for power supply sequencing
- VTT termination regulator
- Output voltage range: 0.5 to 1.75 V
- 3-A sink and source current
- Integrated precision voltage divider network with sense input
- Remote sensing (VTTSNS)
- VTTREF buffered reference
- 49% to 51% accuracy with
respect to VDDQSNS (±3 mA)
- ±10 mA sink and source
current
- Undervoltage lockout (UVLO) and overcurrent
limit (OCL) functionality integrated
- Plastic package
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