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  • UCC21717-Q1 Automotive 10A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI

    • SLUSEK4B April   2022  – June 2024 UCC21717-Q1

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  • UCC21717-Q1 Automotive 10A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI
  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Power Ratings
    6. 5.6  Insulation Specifications
    7. 5.7  Safety Limiting Values
    8. 5.8  Electrical Characteristics
    9. 5.9  Switching Characteristics
    10. 5.10 Insulation Characteristics Curves
    11. 5.11 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Propagation Delay
      1. 6.1.1 Non-Inverting and Inverting Propagation Delay
    2. 6.2 Input Deglitch Filter
    3. 6.3 Active Miller Clamp
      1. 6.3.1 Internal Active Miller Clamp
    4. 6.4 Undervoltage Lockout (UVLO)
      1. 6.4.1 VCC UVLO
      2. 6.4.2 VDD UVLO
    5. 6.5 Overcurrent (OC) Protection
      1. 6.5.1 OC Protection with Soft Turn-OFF
    6. 6.6 Soft Turn-Off Triggered by RST/EN
      1. 6.6.1 Soft Turn-Off Triggered by RST/EN
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Power Supply
      2. 7.3.2  Driver Stage
      3. 7.3.3  VCC and VDD Undervoltage Lockout (UVLO)
      4. 7.3.4  Active Pulldown
      5. 7.3.5  Short Circuit Clamping
      6. 7.3.6  Internal Active Miller Clamp
      7. 7.3.7  Overcurrent and Short Circuit Protection
      8. 7.3.8  Soft Turn-Off
      9. 7.3.9  Fault (FLT), Reset and Enable (RST/EN)
      10. 7.3.10 Isolated Analog to PWM Signal Function
    4. 7.4 Device Functional Modes
  9. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Filters for IN+, IN-, and RST/EN
        2. 8.2.2.2 PWM Interlock of IN+ and IN-
        3. 8.2.2.3 FLT, RDY, and RST/EN Pin Circuitry
        4. 8.2.2.4 RST/EN Pin Control
        5. 8.2.2.5 Turn-On and Turn-Off Gate Resistors
        6. 8.2.2.6 Overcurrent and Short Circuit Protection
          1. 8.2.2.6.1 Protection Based on Power Modules with Integrated SenseFET
          2. 8.2.2.6.2 Protection Based on Desaturation Circuit
          3. 8.2.2.6.3 Protection Based on Shunt Resistor in Power Loop
        7. 8.2.2.7 Isolated Analog Signal Sensing
          1. 8.2.2.7.1 Isolated Temperature Sensing
          2. 8.2.2.7.2 Isolated DC Bus Voltage Sensing
        8. 8.2.2.8 Higher Output Current Using an External Current Buffer
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information
  15. IMPORTANT NOTICE

Package Options

Mechanical Data (Package|Pins)
  • DW|16
    • MSOI003I
Thermal pad, mechanical data (Package|Pins)
  • DW|16
    • QFND505A
Orderable Information
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  • slusek4b_pm
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Data Sheet

UCC21717-Q1 Automotive 10A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI

1 Features

  • 5.7kVRMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature range
  • Functional Safety Quality-Managed
    • Documentation available to aid functional safety system design
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33V maximum output drive voltage (VDD-VEE)
  • ±10A drive strength and split output
  • 150V/ns minimum CMTI
  • 270ns response time fast overcurrent protection
  • 4A internal active Miller clamp
  • 400mA soft turn-off under fault condition
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Disabling the device with RST/EN triggers a soft turn off
  • Rejects <40ns noise transient and pulses on input pins
  • 12V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage immunity up to 5V
  • 130ns (maximum) propagation delay and 30ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C

 
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