UCC21759-Q1 Automotive 10A Source/Sink Basic Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI
UCC21759-Q1 Automotive 10A Source/Sink Basic Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI
UCC21759-Q1 Automotive 10A
Source/Sink Basic Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection,
Isolated Analog Sensing and High-CMTI
1 Features
3kVRMS single channel
isolated gate driver
AEC-Q100 qualified for
automotive applications
Device temperature grade
1: -40°C to +125°C ambient operating temperature range
Device HBM ESD
classification level 3A
Device CDM ESD
classofication level C3
Drives SiC MOSFETs and IGBTs up
to 900Vpk
33V maximum output drive voltage
(VDD-VEE)
High peak drive current and high
CMTI
±10A drive strength and split output
150V/ns minimum CMTI
200ns response time fast DESAT
protection
4A internal active Miller clamp
400mA soft turn-off under fault conditions
Isolated analog sensor with PWM
output for
Temperature sensing with
NTC, PTC or thermal diode
High voltage DC-Link or
phase voltage
Alarm FLT on
over current and reset from RST/EN
Fast enable/disable response on
RST/EN
Rejects <40ns noise transients
and pulses on input pins
12V VDD UVLO with power good on
RDY
Inputs/outputs with
over/under-shoot transient voltage immunity up to 5V
130ns (maximum) propagation delay
and 30ns (maximum) pulse/part skew
SOIC-16 DW package with creepage and clearance distance >
8mm
Operating junction temperature
–40°C to +150°C
Safety-related certifications:
4242VPK basic
isolation per EN IEC 60747-17 (VDE 0884-17)
