DRV8351-SEP is a three phase half-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8351-SEPD generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750mA source and 1.5A sink currents.
The phase pins SHx are able to tolerate significant negative voltage transients; while high side gate driver supply BSTx and GHx can support higher positive voltage transients (57.5V) abs max voltage which improve the robustness of the system. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high sides through GVDD and BST undervoltage lockout.
| Type | Title | Date | ||
|---|---|---|---|---|
| * | Data sheet | DRV8351-SEP: 40-V Three-Phase BLDC Gate Driver datasheet | PDF | HTML | 09 Dec 2024 |
| * | Radiation & reliability report | DRV8351-SEP Total Ionizing Dose (TID) Report | PDF | HTML | 12 Dec 2024 |
For additional terms or required resources, click any title below to view the detail page where available.
The DRV8351-SEP evaluation module (EVM) is a 30A, 3-phase brushless DC drive stage based on the DRV8351-SEP gate driver for BLDC motors. The DRV8351-SEP incorporates three diodes for bootstrap operation without the need for external diodes. The EVM includes three current shunt amplifiers for (...)
| Package | Pins | CAD symbols, footprints & 3D models |
|---|---|---|
| TSSOP (PW) | 20 | Ultra Librarian |
Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.
If you have questions about quality, packaging or ordering TI products, see TI support.