Product details

Current consumption (mA) 120 Frequency (min) (MHz) 3200 Frequency (max) (MHz) 4200 Gain (typ) (dB) 18.8 Noise figure (typ) (dB) 3.8 OIP3 (typ) (dBm) 31.5 P1dB (typ) (dBm) 18 Number of channels 1 Operating temperature range (°C) -40 to 105 Type Active Balun Rating Catalog
Current consumption (mA) 120 Frequency (min) (MHz) 3200 Frequency (max) (MHz) 4200 Gain (typ) (dB) 18.8 Noise figure (typ) (dB) 3.8 OIP3 (typ) (dBm) 31.5 P1dB (typ) (dBm) 18 Number of channels 1 Operating temperature range (°C) -40 to 105 Type Active Balun Rating Catalog
WQFN (RRL) 12 4 mm² 2 x 2
  • Single-Channel, Narrow-Band Differential Input to Single-Ended Output RF Gain Block Amplifier
  • Supports 3.2 – 4.2 GHz 1-dB BW Typical
  • 18 dB Typical Gain Across the Band
  • 3.8 dB Noise Figure
  • 31.5 dBm OIP3
  • 18 dBm Output P1dB
  • 395 mW Power Consumption on Single +3.3 V Supply
  • Up to 105°C TC Operating Temperature
  • Single-Channel, Narrow-Band Differential Input to Single-Ended Output RF Gain Block Amplifier
  • Supports 3.2 – 4.2 GHz 1-dB BW Typical
  • 18 dB Typical Gain Across the Band
  • 3.8 dB Noise Figure
  • 31.5 dBm OIP3
  • 18 dBm Output P1dB
  • 395 mW Power Consumption on Single +3.3 V Supply
  • Up to 105°C TC Operating Temperature

LMH9135 are high-performance, single-channel, differential input to single-ended output transmit radio frequency (RF) gain block amplifiers that support 3.2 – 4.2 GHz frequency band. The device can support the requirements for next generation 5G active antenna systems (AAS) or small-cell applications while driving the input of a power amplifier (PA). The RF amplifier provides 18 dB typical gain with good linearity performance of +31.5 dBm Output IP3, while maintaining less than 4 dB noise figure across the whole 1 dB bandwidth. The device is internally matched for 100-Ω differential input impedance providing easy interface with an RF-sampling or Zero-IF analog front-end (AFE) at the input. Also, the device is internally matched for 50-Ω single-ended output impedance that is required to easily interface with a post-amplifier, surface acoustic wave (SAW) filter, or power amplifier (PA).

Operating on a single 3.3 V supply, the device consumes about 395 mW typical active power making it suitable for high-density 5G massive MIMO applications. Also, the device is available in a space saving 2 mm x 2 mm, 12-pin QFN package. The device is rated for an operating temperature of up to 105°C to provide a robust system design. There is a 1.8-V JEDEC compliant power down pin available for fast power down and power up of the device suitable for time division duplex (TDD) systems.

LMH9135 are high-performance, single-channel, differential input to single-ended output transmit radio frequency (RF) gain block amplifiers that support 3.2 – 4.2 GHz frequency band. The device can support the requirements for next generation 5G active antenna systems (AAS) or small-cell applications while driving the input of a power amplifier (PA). The RF amplifier provides 18 dB typical gain with good linearity performance of +31.5 dBm Output IP3, while maintaining less than 4 dB noise figure across the whole 1 dB bandwidth. The device is internally matched for 100-Ω differential input impedance providing easy interface with an RF-sampling or Zero-IF analog front-end (AFE) at the input. Also, the device is internally matched for 50-Ω single-ended output impedance that is required to easily interface with a post-amplifier, surface acoustic wave (SAW) filter, or power amplifier (PA).

Operating on a single 3.3 V supply, the device consumes about 395 mW typical active power making it suitable for high-density 5G massive MIMO applications. Also, the device is available in a space saving 2 mm x 2 mm, 12-pin QFN package. The device is rated for an operating temperature of up to 105°C to provide a robust system design. There is a 1.8-V JEDEC compliant power down pin available for fast power down and power up of the device suitable for time division duplex (TDD) systems.

Download View video with transcript Video

Technical documentation

star =Top documentation for this product selected by TI
No results found. Please clear your search and try again.
View all 3
Type Title Date
* Data sheet LMH9135 3.2 – 4.2 GHz Differential to Single-Ended Amplifier with Integrated Balun datasheet PDF | HTML 21 Aug 2020
Certificate LMH9135RRLEVM EU Declaration of Conformity (DoC) 15 May 2020
EVM User's guide LMH9135 Evaluation Module User's Guide PDF | HTML 02 Apr 2020

Design & development

Please view the Design & development section on a desktop.

Ordering & quality

Information included:
  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring
Information included:
  • Fab location
  • Assembly location

Recommended products may have parameters, evaluation modules or reference designs related to this TI product.

Support & training

TI E2E™ forums with technical support from TI engineers

Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.

If you have questions about quality, packaging or ordering TI products, see TI support. ​​​​​​​​​​​​​​

Videos