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SN74F10

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3-ch, 3-input, 4.5-V to 5.5-V bipolar NAND gates

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Data sheet

SN74F10

ACTIVE
Data sheet Order now

Product details

Technology family F Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 3 Inputs per channel 3 IOL (max) (mA) 20 IOH (max) (mA) -1 Input type Bipolar Output type Push-Pull Features Very high speed (tpd 5-10ns) Data rate (max) (Mbps) 70 Rating Catalog Operating temperature range (°C) 0 to 70
Technology family F Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 3 Inputs per channel 3 IOL (max) (mA) 20 IOH (max) (mA) -1 Input type Bipolar Output type Push-Pull Features Very high speed (tpd 5-10ns) Data rate (max) (Mbps) 70 Rating Catalog Operating temperature range (°C) 0 to 70
PDIP (N) 14 181.42 mm² 19.3 x 9.4 SOIC (D) 14 51.9 mm² 8.65 x 6 SOP (NS) 14 79.56 mm² 10.2 x 7.8
  • Package Options Include Plastic Small-Outline Packages, Ceramic Chip Carriers, and Standard Plastic and Ceramic 300-mil DIPs
  • Package Options Include Plastic Small-Outline Packages, Ceramic Chip Carriers, and Standard Plastic and Ceramic 300-mil DIPs

These devices contain three independent 3-input NAND gates. They perform the Boolean functionsor in positive logic.

The SN54F10 is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74F10 is characterized for operation from 0°C to 70°C.

 

 

These devices contain three independent 3-input NAND gates. They perform the Boolean functionsor in positive logic.

The SN54F10 is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74F10 is characterized for operation from 0°C to 70°C.

 

 
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* Data sheet Triple 3-Input Positive-NAND Gates datasheet (Rev. A) 01 Oct 1993

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