TXS4558

ACTIVE

Dual SIM card power supply with level translator and dedicated dual LDO

Product details

Technology family TXS Applications SIM Card Rating Catalog Operating temperature range (°C) -40 to 85
Technology family TXS Applications SIM Card Rating Catalog Operating temperature range (°C) -40 to 85
WQFN (RUK) 20 9 mm² 3 x 3
  • Level Translator
    • VCC Range of 1.65 V to 3.3 V
    • VBATT Range of 2.3V to 5.5V
  • Low-Dropout (LDO) Regulator
    • 50-mA LDO Regulator With Enable
    • 1.8-V or 2.95-V Selectable Output Voltage
    • Very Low Dropout: 100 mV (Max) at 50 mA
  • Control and Communication Through GPIO Interface with Baseband Processor
  • Isolated Clock Stop Mode for both SIM1 and SIM2 cards
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-B)
    • 500-V Charged-Device Model (C101)
    • 8kV HBM for SIM pins
  • Package
    • 20-Pin QFN (3 mm x 3 mm)

  • Level Translator
    • VCC Range of 1.65 V to 3.3 V
    • VBATT Range of 2.3V to 5.5V
  • Low-Dropout (LDO) Regulator
    • 50-mA LDO Regulator With Enable
    • 1.8-V or 2.95-V Selectable Output Voltage
    • Very Low Dropout: 100 mV (Max) at 50 mA
  • Control and Communication Through GPIO Interface with Baseband Processor
  • Isolated Clock Stop Mode for both SIM1 and SIM2 cards
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-B)
    • 500-V Charged-Device Model (C101)
    • 8kV HBM for SIM pins
  • Package
    • 20-Pin QFN (3 mm x 3 mm)

The TXS4558 is a complete dual-supply standby Smart Identity Module (SIM) card solution for interfacing wire-less baseband processors with two individual SIM subscriber cards to store data for mobile handset applications. It is a custom device which is used to extend a single SIM/UICC interface to be able to support two SIM’s/UICC’s.

The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. It includes a high-speed level translator capable of supporting Class-B (2.95 V) and Class-C (1.8 V) interfaces, two low-dropout (LDO) voltage regulators that have output voltages that are selectable between 2.95-V Class-B and 1.8-V Class-C interfaces. Simple GPIO inputs are used to switch between the two SIM cards and to put it into different modes. The voltage-level translator has two supply voltage pins. VCC sets the reference for the baseband interface and can be operated from 1.65 V to 3.3 V. VSIM1 and VSIM2 are programmed to either 1.8 V or 2.95 V, each supplied by an independent internal LDO regulator. The integrated LDO accepts input battery voltages from 2.3 V to 5.5 V and outputs up to 50 mA to the B-side circuitry and external Class-B or Class-C SIM card.

The TXS4558 also incorporates shutdown sequence for the SIM card pins based on the ISO 7816-3 specification for SIM cards. The device also has 8kV HBM protection for the SIM card pins and standard 2kV HBM protection for all the other pins.

The TXS4558 is a complete dual-supply standby Smart Identity Module (SIM) card solution for interfacing wire-less baseband processors with two individual SIM subscriber cards to store data for mobile handset applications. It is a custom device which is used to extend a single SIM/UICC interface to be able to support two SIM’s/UICC’s.

The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. It includes a high-speed level translator capable of supporting Class-B (2.95 V) and Class-C (1.8 V) interfaces, two low-dropout (LDO) voltage regulators that have output voltages that are selectable between 2.95-V Class-B and 1.8-V Class-C interfaces. Simple GPIO inputs are used to switch between the two SIM cards and to put it into different modes. The voltage-level translator has two supply voltage pins. VCC sets the reference for the baseband interface and can be operated from 1.65 V to 3.3 V. VSIM1 and VSIM2 are programmed to either 1.8 V or 2.95 V, each supplied by an independent internal LDO regulator. The integrated LDO accepts input battery voltages from 2.3 V to 5.5 V and outputs up to 50 mA to the B-side circuitry and external Class-B or Class-C SIM card.

The TXS4558 also incorporates shutdown sequence for the SIM card pins based on the ISO 7816-3 specification for SIM cards. The device also has 8kV HBM protection for the SIM card pins and standard 2kV HBM protection for all the other pins.

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Technical documentation

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Type Title Date
* Data sheet Dual-SIM Card Power Supply with Level Translator & Dedicated Dual LDO datasheet (Rev. A) 27 Sep 2011
Application note Schematic Checklist - A Guide to Designing with Auto-Bidirectional Translators PDF | HTML 12 Jul 2024
Application note Understanding Transient Drive Strength vs. DC Drive Strength in Level-Shifters (Rev. A) PDF | HTML 03 Jul 2024
Selection guide Voltage Translation Buying Guide (Rev. A) 15 Apr 2021
User guide TXS4558EVM 22 Sep 2011

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

TXS4558EVM — TXS4558 Evaluation Module

The Texas Instruments TXS4558 Evaluation Module (EVM) is designed to showcase the TXS4558, a complete dual-supply standby Smart Identity Module (SIM) card solution for interfacing wireless baseband processors with two individual SIM subscriber cards to store data for mobile handset applications. (...)

User guide: PDF
Not available on TI.com
Simulation model

TXS4558 IBIS Model

SLLM155.ZIP (48 KB) - IBIS Model
Package Pins CAD symbols, footprints & 3D models
WQFN (RUK) 20 Ultra Librarian

Ordering & quality

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