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CD54HC10

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Military 3-ch, 3-input, 2-V to 6-V 5.2 mA drive strength NAND gate

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Data sheet

CD54HC10

ACTIVE
Data sheet Order now

Product details

Technology family HC Supply voltage (min) (V) 2 Supply voltage (max) (V) 6 Number of channels 3 Inputs per channel 3 IOL (max) (mA) 5.2 IOH (max) (mA) -5.2 Input type Standard CMOS Output type Push-Pull Features High speed (tpd 10- 50ns) Data rate (max) (Mbps) 28 Rating Military Operating temperature range (°C) -55 to 125
Technology family HC Supply voltage (min) (V) 2 Supply voltage (max) (V) 6 Number of channels 3 Inputs per channel 3 IOL (max) (mA) 5.2 IOH (max) (mA) -5.2 Input type Standard CMOS Output type Push-Pull Features High speed (tpd 10- 50ns) Data rate (max) (Mbps) 28 Rating Military Operating temperature range (°C) -55 to 125
CDIP (J) 14 130.4652 mm² 19.56 x 6.67
  • Buffered inputs
  • Wide operating voltage range: 2 V to 6 V
  • Wide operating temperature range: -55°C to +125°C
  • Supports fanout up to 10 LSTTL loads
  • Significant power reduction compared to LSTTL logic ICs
  • Buffered inputs
  • Wide operating voltage range: 2 V to 6 V
  • Wide operating temperature range: -55°C to +125°C
  • Supports fanout up to 10 LSTTL loads
  • Significant power reduction compared to LSTTL logic ICs

This device contains three independent 3-input NAND gates. Each gate performs the Boolean function Y =  A ● B ● C in positive logic.

This device contains three independent 3-input NAND gates. Each gate performs the Boolean function Y =  A ● B ● C in positive logic.
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* Data sheet CDx4HC10 Triple 3-Input NAND Gates datasheet (Rev. D) PDF | HTML 12 May 2021

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