Gehäuseinformationen
| Gehäuse | Pins SOIC (D) | 8 |
| Betriebstemperaturbereich (°C) -40 to 125 |
| Gehäusemenge | Träger 2.500 | LARGE T&R |
Merkmale von INA818
- Low offset voltage: 10 µV (typ), 35 µV (max)
- Gain drift: 5 ppm/°C (G = 1),
35 ppm/°C (G > 1) (max) - Noise: 8 nV/√Hz
- Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100)
- Stable with 1-nF capacitive loads
- Inputs protected up to ±60 V
- Common-mode rejection: 110 dB, G = 10 (min)
- Power-supply rejection: 100 dB, G = 1 (min)
- Supply current: 385 µA (max)
- Supply voltage range:
- Single supply: 4.5 V to 36 V
- Dual supply: ±2.25 V to ±18 V
- Specified temperature: –40°C to +125°C
- Package: 8-pin SOIC
Beschreibung von INA818
The INA818 is a high-precision instrumentation amplifier that offers low power consumption and operates over a very wide single-supply or dual-supply range. A single external resistor sets any gain from 1 to 10000. The device offers high precision as a result of super-beta input transistors, which provide exceptionally low input offset voltage, offset voltage drift, input bias current, input voltage, and current noise. Additional circuitry protects the inputs against overvoltage up to ±60 V.
The INA818 is optimized to provide a high common-mode rejection ratio. At G = 1, the common-mode rejection ratio exceeds 90 dB across the full input common-mode range. The device is designed for low-voltage operation from a 4.5-V single supply, as well as dual supplies up to ±18 V.
The INA818 is available in an 8-pin SOIC package and is specified over the –40°C to +125°C temperature range.