Gehäuseinformationen
| Gehäuse | Pins TO-CAN (LMC) | 8 |
| Betriebstemperaturbereich (°C) 0 to 70 |
| Gehäusemenge | Träger 500 | OTHER |
Merkmale von LF356-MIL
- Advantages
- Replace Expensive Hybrid and Module FET Op Amps
- Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices
- Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner
- Offset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic Amplifiers
- New Output Stage Allows Use of Large Capacitive Loads (5,000 pF) Without Stability Problems
- Internal Compensation and Large Differential Input Voltage Capability
- Common
Features
- Low Input Bias Current: 30 pA
- Low Input Offset Current: 3 pA
- High Input Impedance: 1012 Ω
- Low Input Noise Current: 0.01 pA/√Hz
- High Common-Mode Rejection Ratio: 100 dB
- Large DC Voltage Gain: 106 dB
- Uncommon Features
- Extremely Fast Settling Time to 0.01%: 1.5 µs
- Fast Slew Rate: 12 V/µs
- Wide Gain Bandwidth: 5 MHz
- Low Input Noise Voltage: 12 nV/√Hz
Beschreibung von LF356-MIL
The LF356-MIL device are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.