SN54ACT10

ACTIVE

Military 3-ch, 3-input, 4.5-V to 5.5-V NAND gates with TTL-compatible CMOS inputs

Product details

Technology family ACT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 3 Inputs per channel 3 IOL (max) (mA) 24 IOH (max) (mA) -24 Input type TTL-Compatible CMOS Output type Push-Pull Features Over-voltage tolerant inputs, Very high speed (tpd 5-10ns) Data rate (max) (Mbps) 90 Rating Military Operating temperature range (°C) -55 to 125
Technology family ACT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 3 Inputs per channel 3 IOL (max) (mA) 24 IOH (max) (mA) -24 Input type TTL-Compatible CMOS Output type Push-Pull Features Over-voltage tolerant inputs, Very high speed (tpd 5-10ns) Data rate (max) (Mbps) 90 Rating Military Operating temperature range (°C) -55 to 125
CDIP (J) 14 130.4652 mm² 19.56 x 6.67 CFP (W) 14 58.023 mm² 9.21 x 6.3 LCCC (FK) 20 79.0321 mm² 8.89 x 8.89
  • 4.5V to 5.5V VCC operation
  • Inputs accept voltages to 5.5V
  • Max tpd of 9.5ns at 5V
  • Inputs are TTL-voltage compatible
  • 4.5V to 5.5V VCC operation
  • Inputs accept voltages to 5.5V
  • Max tpd of 9.5ns at 5V
  • Inputs are TTL-voltage compatible

The ’ACT10 devices contain three independent 3-input NAND gates. The devices perform the Boolean functions Y = A • B • C or Y = A + B + C in positive logic.

The ’ACT10 devices contain three independent 3-input NAND gates. The devices perform the Boolean functions Y = A • B • C or Y = A + B + C in positive logic.

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Technical documentation

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Type Title Date
* Data sheet SNx4ACT10 Triple 3-Input Positive-nand Gates datasheet (Rev. D) PDF | HTML 26 Jul 2024
* SMD SN54ACT10 SMD 5962-92182 21 Jun 2016
Application note Implications of Slow or Floating CMOS Inputs (Rev. E) 26 Jul 2021
Selection guide Logic Guide (Rev. AB) 12 Jun 2017
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 02 Dec 2015
User guide LOGIC Pocket Data Book (Rev. B) 16 Jan 2007
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 Jul 2004
Application note Selecting the Right Level Translation Solution (Rev. A) 22 Jun 2004
Application note TI IBIS File Creation, Validation, and Distribution Processes 29 Aug 2002
Application note CMOS Power Consumption and CPD Calculation (Rev. B) 01 Jun 1997
Application note Designing With Logic (Rev. C) 01 Jun 1997
Application note Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc 01 Apr 1996

Design & development

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Package Pins CAD symbols, footprints & 3D models
CDIP (J) 14 Ultra Librarian
CFP (W) 14 Ultra Librarian
LCCC (FK) 20 Ultra Librarian

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