LM5114
- Independent Source and Sink Outputs for
Controllable Rise and Fall Times - 4-V to 12.6-V Single Power Supply
- 7.6-A/1.3-A Peak Sink and Source Drive Current
- 0.23-Ω Open-drain Pulldown Sink Output
- 2-Ω Open-drain Pullup Source Output
- 12-ns (Typical) Propagation Delay
- Matching Delay Time Between Inverting and
Noninverting Inputs - TTL/CMOS Logic Inputs
- 0.68-V Input Hysteresis
- Up to 14-V Logic Inputs (Regardless of VDD Voltage)
- Low Input Capacitance: 2.5-pF (Typical)
- –40°C to 125°C Operating Temperature Range
- Pin-to-Pin Compatible With MAX5048
- 6-Pin SOT-23
The LM5114 is designed to drive low-side MOSFETs in boost-type configurations or to drive secondary synchronous MOSFETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel. The LM5114 also has the features necessary to drive low-side enhancement mode Gallium Nitride (GaN) FETs. The LM5114 provides inverting and noninverting inputs to satisfy requirements for inverting and Noninverting gate drive in a single device type. The inputs of the LM5114 are TTL/CMOS Logic compatible and withstand input voltages up to 14 V regardless of the VDD voltage. The LM5114 has split gate outputs, providing flexibility to adjust the turnon and turnoff strength independently. The LM5114 has fast switching speed and minimized propagation delays, facilitating high-frequency operation. The LM5114 is available in a 6-pin SOT-23 package and a 6-pin WSON package with an exposed pad to aid thermal dissipation.
技術文件
| 類型 | 標題 | 日期 | ||
|---|---|---|---|---|
| * | Data sheet | LM5114 Single 7.6-A Peak Current Low-Side Gate Driver datasheet (Rev. F) | PDF | HTML | 2015年 11月 30日 |
| Application brief | External Gate Resistor Selection Guide (Rev. A) | 2020年 2月 28日 | ||
| Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 2020年 2月 28日 | ||
| Application note | Improving Efficiency of DC-DC Conversion through Layout | 2019年 5月 7日 | ||
| More literature | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018年 10月 29日 | ||
| Application brief | Enable Function with Unused Differential Input | 2018年 7月 11日 | ||
| White paper | A comprehensive methodology to qualify the reliability of GaN products | 2015年 3月 2日 | ||
| White paper | Advancing Power Supply Solutions Through the Promise of GaN | 2015年 2月 24日 | ||
| User guide | AN-2206 LM5114 Evaluation Board (Rev. A) | 2013年 5月 3日 |
設計與開發
如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。
LM5114BSDEVAL — LM5114 升壓閘極驅動器評估板
The LM5114 is a single low-side gate driver with 7.6A/1.3A peak sink/source drive current capability. It can be used to drive standard Si MOSFETs or enhancement mode GaN FETs in boost type configurations or to drive secondary synchronous FETs in isolated topologies. The LM5114 evaluation board is (...)
PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具
PMP22510 — 切換式電容器整合式降壓 (SCIB) 電源轉換器參考設計
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| SOT-23 (DBV) | 6 | Ultra Librarian |
| WSON (NGG) | 6 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。