產品詳細資料

Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 64 IOH (max) (mA) -32 Input type TTL Output type TTL Features Over-voltage tolerant inputs, Partial power down (Ioff), Very high speed (tpd 5-10ns) Technology family ABT Rating Catalog Operating temperature range (°C) -40 to 85
Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 64 IOH (max) (mA) -32 Input type TTL Output type TTL Features Over-voltage tolerant inputs, Partial power down (Ioff), Very high speed (tpd 5-10ns) Technology family ABT Rating Catalog Operating temperature range (°C) -40 to 85
PDIP (N) 20 228.702 mm² 24.33 x 9.4 SOIC (DW) 20 131.84 mm² 12.8 x 10.3 SOP (NS) 20 98.28 mm² 12.6 x 7.8 SSOP (DB) 20 56.16 mm² 7.2 x 7.8 TSSOP (PW) 20 41.6 mm² 6.5 x 6.4
  • State-of-the-Art EPIC-IIBTM BiCMOS Design Significantly Reduces Power Dissipation
  • ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
  • High-Drive Outputs (-32-mA IOH, 64-mA IOL)
  • Package Options Include Plastic Small-Outline (DW), Shrink Small-Outline (DB), and Thin Shrink Small-Outline (PW) Packages, Ceramic Chip Carriers (FK), and Plastic (N) and Ceramic (J) DIPs

 

EPIC-IIB is a trademark of Texas Instruments Incorporated.

  • State-of-the-Art EPIC-IIBTM BiCMOS Design Significantly Reduces Power Dissipation
  • ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
  • High-Drive Outputs (-32-mA IOH, 64-mA IOL)
  • Package Options Include Plastic Small-Outline (DW), Shrink Small-Outline (DB), and Thin Shrink Small-Outline (PW) Packages, Ceramic Chip Carriers (FK), and Plastic (N) and Ceramic (J) DIPs

 

EPIC-IIB is a trademark of Texas Instruments Incorporated.

The 'ABT640 bus transceivers are designed for asynchronous communication between data buses. These devices transmit inverted data from the A bus to the B bus or from the B bus to the A bus, depending on the level at the direction-control (DIR) input. The output-enable () input can be used to disable the device so that the buses are effectively isolated.

To ensure the high-impedance state during power up or power down, should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN54ABT640 is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74ABT640 is characterized for operation from -40°C to 85°C.

 

 

The 'ABT640 bus transceivers are designed for asynchronous communication between data buses. These devices transmit inverted data from the A bus to the B bus or from the B bus to the A bus, depending on the level at the direction-control (DIR) input. The output-enable () input can be used to disable the device so that the buses are effectively isolated.

To ensure the high-impedance state during power up or power down, should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN54ABT640 is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74ABT640 is characterized for operation from -40°C to 85°C.

 

 

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技術文件

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類型 標題 日期
* Data sheet Octal Bus Transceivers With 3-State Outputs datasheet (Rev. C) 1997年 1月 1日
Application note Implications of Slow or Floating CMOS Inputs (Rev. E) 2021年 7月 26日
Selection guide Logic Guide (Rev. AB) 2017年 6月 12日
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015年 12月 2日
User guide LOGIC Pocket Data Book (Rev. B) 2007年 1月 16日
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日
Application note Selecting the Right Level Translation Solution (Rev. A) 2004年 6月 22日
Application note Quad Flatpack No-Lead Logic Packages (Rev. D) 2004年 2月 16日
Application note TI IBIS File Creation, Validation, and Distribution Processes 2002年 8月 29日
Application note Power-Up 3-State (PU3S) Circuits in TI Standard Logic Devices 2002年 5月 10日
Selection guide Advanced Bus Interface Logic Selection Guide 2001年 1月 9日
Application note Bus-Interface Devices With Output-Damping Resistors Or Reduced-Drive Outputs (Rev. A) 1997年 8月 1日
Application note Advanced BiCMOS Technology (ABT) Logic Characterization Information (Rev. B) 1997年 6月 1日
Application note Designing With Logic (Rev. C) 1997年 6月 1日
Application note Advanced BiCMOS Technology (ABT) Logic Enables Optimal System Design (Rev. A) 1997年 3月 1日
Application note Family of Curves Demonstrating Output Skews for Advanced BiCMOS Devices (Rev. A) 1996年 12月 1日
Application note Input and Output Characteristics of Digital Integrated Circuits 1996年 10月 1日
Application note Live Insertion 1996年 10月 1日
Application note Understanding Advanced Bus-Interface Products Design Guide 1996年 5月 1日

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PDIP (N) 20 Ultra Librarian
SOIC (DW) 20 Ultra Librarian
SOP (NS) 20 Ultra Librarian
SSOP (DB) 20 Ultra Librarian
TSSOP (PW) 20 Ultra Librarian

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