SN74BCT29827B
- State-of-the-Art BiCMOS Design Significantly Reduces ICCZ
- ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
- 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers
- P-N-P Inputs Reduce DC Loading
- Flow-Through Architecture Optimizes PCB Layout
- Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Standard Plastic and Ceramic 300-mil DIPs (JT, NT)
These 10-bit buffers and bus drivers provide high-performance bus interface for wide data paths or buses carrying parity.
The 3-state control gate is a 2-input AND gate with active-low inputs so that if either output-enable (or ) input is high, all ten outputs are in the high-impedance state. The outputs are also in the high-impedance state during power-up and power-down conditions. The outputs remain in the high-impedance state while the device is powered down.
The SN54BCT29827B is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74BCT29827B is characterized for operation from 0°C to 70°C.
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檢視所有 1 類型 | 標題 | 日期 | ||
---|---|---|---|---|
* | Data sheet | 10-Bit Buffers/Drivers With 3-State Outputs datasheet (Rev. C) | 1993年 11月 1日 |
訂購與品質
內含資訊:
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
內含資訊:
- 晶圓廠位置
- 組裝地點