SN74LVC2G240
- Available in the Texas Instruments NanoFree Package
- Supports 5-V VCC Operation
- Inputs Accept Voltages to 5.5 V
- Max tpd of 4.6 ns at 3.3 V
- Low Power Consumption, 10-µA Max ICC
- ±24-mA Output Drive at 3.3 V
- Typical VOLP (Output Ground Bounce)
<0.8 V at VCC = 3.3 V, TA = 25°C - Typical VOHV (Output VOH Undershoot)
>2 V at VCC = 3.3 V, TA = 25°C - Ioff Supports Live Insertion, Partial-Power-Down Mode, and Back-Drive Protection
- Can Be Used as a Down Translator to Translate Inputs From a Max of 5.5 V Down to the VCC Level
- Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II - ESD Protection Exceeds JESD 22
- 2000-V Human-Body Model (A114-A)
- 1000-V Charged-Device Model (C101)
This dual buffer driver is designed for 1.65-V to 5.5-V VCC operation.
The SN74LVC2G240 device is designed specifically to improve the performance and density of 3-state memory address drivers, clock drivers, and bus-oriented receivers and transmitters.
NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the die as the package.
This device is organized as two 1-bit buffers/drivers with separate output-enable (OE) inputs. When OE is low, the device passes data from the A input to the Y output. When OE is high, the outputs are in the high-impedance state.
To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.
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5-8-LOGIC-EVM — 適用於 5 針腳至 8 針腳 DCK、DCT、DCU、DRL 和 DBV 封裝的通用邏輯評估模組
封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
---|---|---|
DSBGA (YZP) | 8 | Ultra Librarian |
SSOP (DCT) | 8 | Ultra Librarian |
VSSOP (DCU) | 8 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點