現在提供此產品的更新版本
可直接投入的替代產品,相較於所比較的裝置,具備升級功能
TLE2161A
- Excellent Output Drive Capability
VO = ± 2.5 V Min at RL = 100,
VCC± = ± 5 V
VO = ± 12.5 V Min at RL = 600,
VCC± = ± 15 V - Low Supply Current...280 uA Typ
- Decompensated for High Slew Rate and
Gain-Bandwidth Product
AVD = 0.5 Min
Slew Rate = 10 V/us Typ
Gain-Bandwidth Product = 6.5 MHz Typ - Wide Operating Supply Voltage Range
VCC ± = ± 3.5 V to ± 18 V - High Open-Loop Gain...280 V/mV Typ
- Low Offset Voltage...500 uV Max
- Low Offset Voltage Drift With Time
0.04 uV/Month Typ - Low Input Bias Current...5 pA Typ
TLE2161, TLE2161A, TLE2161B
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE
u POWER OPERATIONAL AMPLIFIERS
SLOS049D - NOVEMBER 1989 - REVISED MAY 1996
The TLE2161, TLE2161A, and TLE2161B are JFET-input, low-power, precision operational amplifiers manufactured using the Texas Instruments Excalibur process. Decompensated for stability with a minimum closed-loop gain of 5, these devices combine outstanding output drive capability with low power consumption, excellent dc precision, and high gain-bandwidth product.
In addition to maintaining the traditional JFET advantages of fast slew rates and low input bias and offset currents, the Excalibur process offers outstanding parametric stability over time and temperature. This results in a device that remains precise even with changes in temperature and over years of use.
The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).
A variety of available options includes small-outline packages and chip-carrier versions for high-density system applications.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C.
技術文件
類型 | 標題 | 日期 | ||
---|---|---|---|---|
* | Data sheet | Excalibur JFET-Input High-Output-Drive Micro Power Operational Amplifiers datasheet (Rev. D) | 1996年 5月 1日 | |
E-book | The Signal e-book: A compendium of blog posts on op amp design topics | 2017年 3月 28日 | ||
Application note | TLE2161 EMI Immunity Performance | 2013年 12月 31日 |
設計與開發
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AMP-PDK-EVM — 放大器性能開發套件評估模組
放大器性能開發套件 (PDK) 是一款評估模組 (EVM) 套件,可測試通用運算放大器 (op amp) 參數,並與大多數運算放大器和比較器相容。EVM 套件提供主板和多個插槽式子卡選項,可滿足封裝需求,使工程師能夠快速評估和驗證裝置性能。
AMP-PDK-EVM 套件支援五種最熱門的業界標準封裝,包括:
- D (SOIC-8)
- PW (TSSOP-14)
- DGK (VSSOP-8)
- DBV(SOT23-5 與 SOT23-6)
- DCK(SC70-5 與 SC70-6)
DIP-ADAPTER-EVM — DIP 轉接器評估模組
Speed up your op amp prototyping and testing with the DIP-Adapter-EVM, which provides a fast, easy and inexpensive way to interface with small, surface-mount ICs. You can connect any supported op amp using the included Samtec terminal strips or wire them directly to existing circuits.
The (...)
ANALOG-ENGINEER-CALC — 類比工程師計算機
CIRCUIT060013 — 具有 T 網路回饋電路的反相放大器
CIRCUIT060074 — 具有比較器電路的高壓側電流感測
PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具
TINA-TI — 基於 SPICE 的類比模擬程式
封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
---|---|---|
SOIC (D) | 8 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點