TPS1120
- Low rDS(on) . . . 0.18
at VGS = -10 V
- 3-V Compatible
- Requires No External VCC
- TTL and CMOS Compatible Inputs
- VGS(th) = -1.5 V Max
- ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015
LinBICMOS is a trademark of Texas Instruments Incorporated
The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have been optimized, by means of the Texas Instruments LinBiCMOSTM process, for 3-V or 5-V power distribution in battery-powered systems. With a maximum VGS(th) of -1.5 V and an IDSS of only 0.5 uA, the TPS1120 is the ideal high-side switch for low-voltage portable battery-management systems, where maximizing battery life is a primary concern. Because portable equipment is potentially subject to electrostatic discharge (ESD), the MOSFETs have built-in circuitry for 2-kV ESD protection. End equipment for the TPS1120 includes notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and PCMCIA cards. For existing designs, the TPS1120D has a pinout common with other p-channel MOSFETs in small-outline integrated circuit SOIC packages.
The TPS1120 is characterized for an operating junction temperature range, TJ, from -40°C to 150°C.
Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than maximum-rated voltages to these high-impedance circuits.
技術文件
類型 | 標題 | 日期 | ||
---|---|---|---|---|
* | Data sheet | Dual P-Channel Enhancement-Mode MOSFETs datasheet (Rev. A) | 1995年 8月 1日 |
設計與開發
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封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
---|---|---|
SOIC (D) | 8 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。