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TPS2105-EP

現行

2.7-5.5V 雙輸入/單輸出 MOSFET、0.5A 主輸入/0.1A 輔助輸入、啟用高電位作動

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產品規格表

現在提供此產品的更新版本

open-in-new 比較替代產品
功能相同，但引腳輸出與所比較的裝置不同
TPS2116 現行 1.6-V 至 5.5-V、40-mΩ、2.5-A、低 IQ、優先功率多工器 Higher output current (2.5A), wider voltage range (1.6V to 5.5V), and smaller operating temperature range (-40°C to 105°C)

TPS2105-EP

現行
產品規格表 立即訂購

產品詳細資料

IN1, IN2 input voltage (min) (V) 2.7 IN1, IN2 input voltage (max) (V) 5.5 IN1 rDS(on) (typ) (mΩ) 250 IN2 rDS(on) (typ) (mΩ) 1300 IN1 output current (max) (A) 0.5 IN2 output current (max) (A) 0.1 Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125 FET Internal Device type Power muxes
IN1, IN2 input voltage (min) (V) 2.7 IN1, IN2 input voltage (max) (V) 5.5 IN1 rDS(on) (typ) (mΩ) 250 IN2 rDS(on) (typ) (mΩ) 1300 IN1 output current (max) (A) 0.5 IN2 output current (max) (A) 0.1 Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125 FET Internal Device type Power muxes
SOT-23 (DBV) 5 8.12 mm² 2.9 x 2.8
  • Dual-Input, Single-Output MOSFET Switch With
    No Reverse Current Flow (No Parasitic Diodes)
  • IN1: 250-mΩ, 500-mA N-Channel; 18-µA Supply Current
  • IN2: 1.3-mΩ, 100-mA P-Channel; 0.75-µA Supply
    Current (VAUX Mode)
  • Advanced Switch Control Logic
  • CMOS and TTL Compatible Enable Input
  • Controlled Rise, Fall, and Transition Times
  • 2.7-V to 5.5-V Operating Range
  • SOT-23-5 Package
  • 2-kV Human Body Model, 750-V Charged Device Model,
    200-V Machine-Model ESD Protection
  • Supports Defense, Aerospace, and Medical Applications
    • Controlled Baseline
    • One Assembly and Test Site
    • One Fabrication Site
    • Available in Military (–55°C to 125°C)
      Temperature Range
    • Extended Product Life Cycle
    • Extended Product-Change Notification
    • Product Traceability
  • Dual-Input, Single-Output MOSFET Switch With
    No Reverse Current Flow (No Parasitic Diodes)
  • IN1: 250-mΩ, 500-mA N-Channel; 18-µA Supply Current
  • IN2: 1.3-mΩ, 100-mA P-Channel; 0.75-µA Supply
    Current (VAUX Mode)
  • Advanced Switch Control Logic
  • CMOS and TTL Compatible Enable Input
  • Controlled Rise, Fall, and Transition Times
  • 2.7-V to 5.5-V Operating Range
  • SOT-23-5 Package
  • 2-kV Human Body Model, 750-V Charged Device Model,
    200-V Machine-Model ESD Protection
  • Supports Defense, Aerospace, and Medical Applications
    • Controlled Baseline
    • One Assembly and Test Site
    • One Fabrication Site
    • Available in Military (–55°C to 125°C)
      Temperature Range
    • Extended Product Life Cycle
    • Extended Product-Change Notification
    • Product Traceability

The TPS2105 is a dual-input, single-output power switch designed to provide uninterrupted output voltage when transitioning between two independent power supplies. Both devices combine one N-channel (250 mΩ) and one P-channel (1.3-Ω) MOSFET with a single output. The P-channel MOSFET (IN2) is used with auxiliary power supplies that deliver lower current for standby modes. The N-channel MOSFET (IN1) is used with a main power supply that delivers higher current required for normal operation. Low on-resistance makes the N-channel the ideal path for higher main supply current when power-supply regulation and system voltage drops are critical. When using the P-channel MOSFET, quiescent current is reduced to 0.75 µA to decrease the demand on the standby power supply. The MOSFETs in the TPS2105 do not have the parasitic diodes, typically found in discrete MOSFETs, thereby preventing back-flow current when the switch is off.

The TPS2105 is a dual-input, single-output power switch designed to provide uninterrupted output voltage when transitioning between two independent power supplies. Both devices combine one N-channel (250 mΩ) and one P-channel (1.3-Ω) MOSFET with a single output. The P-channel MOSFET (IN2) is used with auxiliary power supplies that deliver lower current for standby modes. The N-channel MOSFET (IN1) is used with a main power supply that delivers higher current required for normal operation. Low on-resistance makes the N-channel the ideal path for higher main supply current when power-supply regulation and system voltage drops are critical. When using the P-channel MOSFET, quiescent current is reduced to 0.75 µA to decrease the demand on the standby power supply. The MOSFETs in the TPS2105 do not have the parasitic diodes, typically found in discrete MOSFETs, thereby preventing back-flow current when the switch is off.
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* Data sheet TPS2105-EP VAUX Power-Distribution Switch datasheet PDF | HTML 2014年 7月 7日

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