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DDR 記憶體電源 IC

TPS65296

現行

4.5V 至 18V VIN 完整 LPDDR4 和 LPDDR4X 記憶體電源解決方案

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產品規格表

TPS65296

現行
產品規格表 立即訂購

產品詳細資料

DDR memory type LPDDR4, LPDDR4X Control mode D-CAP3 Iout VDDQ (max) (A) 8 Iout VTT (max) (A) 1.5 Iq (typ) (mA) 0.15 Output VDDQ, VREF, VTT Vin (min) (V) 4.5 Vin (max) (V) 18 Features Complete Solution, Eco Mode, S3/S5 Support Rating Catalog Operating temperature range (°C) -40 to 125 Regulator type Step-Down Module Vin bias (max) (V) 16 Vin bias (min) (V) 4.5 Vout VTT (min) (V) 0.6
DDR memory type LPDDR4, LPDDR4X Control mode D-CAP3 Iout VDDQ (max) (A) 8 Iout VTT (max) (A) 1.5 Iq (typ) (mA) 0.15 Output VDDQ, VREF, VTT Vin (min) (V) 4.5 Vin (max) (V) 18 Features Complete Solution, Eco Mode, S3/S5 Support Rating Catalog Operating temperature range (°C) -40 to 125 Regulator type Step-Down Module Vin bias (max) (V) 16 Vin bias (min) (V) 4.5 Vout VTT (min) (V) 0.6
VQFN-HR (RJE) 18 9 mm² 3 x 3
  • Synchronous buck converter (VDD2)
    • Input voltage range: 4.5 V to 18 V
    • Output voltage fixed at 1.1 V
    • D-CAP3™ mode control for fast transient response
    • Continual output current: 8 A
    • Advanced Eco-mode™ pulse skip
    • Integrated 22-mΩ / 8.6-mΩ RDS(on) internal power switch
    • 600-kHz switching frequency
    • Internal soft start: 1.6 ms
    • Cycle-by-cycle overcurrent protection
    • Latched output OV/UV protections
  • Synchronous buck converter (VDD1)
    • Input voltage range: 3 V to 5.5 V
    • Output voltage fixed at 1.8 V
    • D-CAP3™ mode control for fast transient response
    • Continual output current: 1 A
    • Advanced Eco-mode™ pulse skip
    • Integrated 150-mΩ /120-mΩ RDS(on) internal power switch
    • 580-kHz switching frequency
    • Internal soft start: 1 ms
    • Cycle-by-cycle overcurrent protection
    • Latched output OV/UV protections
  • 1.5-A LDO (VDDQ)
    • 1.5-A continual output current
    • Requires only 10 µF of ceramic output capacitor
    • Support high-Z in S3
    • ±30-mV VDDQ output accuracy (DC+AC)
  • Low quiescent current: 150 µA
  • Power good indicator
  • Output discharge function
  • Power up and power down sequencing control
  • Non-latch for OT and UVLO protections
  • 18-pin 3.0-mm × 3.0-mm HotRod™ VQFN package
  • Synchronous buck converter (VDD2)
    • Input voltage range: 4.5 V to 18 V
    • Output voltage fixed at 1.1 V
    • D-CAP3™ mode control for fast transient response
    • Continual output current: 8 A
    • Advanced Eco-mode™ pulse skip
    • Integrated 22-mΩ / 8.6-mΩ RDS(on) internal power switch
    • 600-kHz switching frequency
    • Internal soft start: 1.6 ms
    • Cycle-by-cycle overcurrent protection
    • Latched output OV/UV protections
  • Synchronous buck converter (VDD1)
    • Input voltage range: 3 V to 5.5 V
    • Output voltage fixed at 1.8 V
    • D-CAP3™ mode control for fast transient response
    • Continual output current: 1 A
    • Advanced Eco-mode™ pulse skip
    • Integrated 150-mΩ /120-mΩ RDS(on) internal power switch
    • 580-kHz switching frequency
    • Internal soft start: 1 ms
    • Cycle-by-cycle overcurrent protection
    • Latched output OV/UV protections
  • 1.5-A LDO (VDDQ)
    • 1.5-A continual output current
    • Requires only 10 µF of ceramic output capacitor
    • Support high-Z in S3
    • ±30-mV VDDQ output accuracy (DC+AC)
  • Low quiescent current: 150 µA
  • Power good indicator
  • Output discharge function
  • Power up and power down sequencing control
  • Non-latch for OT and UVLO protections
  • 18-pin 3.0-mm × 3.0-mm HotRod™ VQFN package

The TPS65296 device provides a complete power solution for LPDDR4/LPDDR4X memory system with the lowest total cost and minimum space. It meets the JEDEC standard for LPDDR4/LPDDR4X power-up and power-down sequence requirement. The TPS65296 integrates two synchronous buck converters (VDD1 and VDD2) and a 1.5-A LDO (VDDQ).

The TPS65296 employs D-CAP3™ mode with 600-kHz switching frequency for fast transient, good load/line regulation, and support for ceramic output capacitors without an external compensation circuit.

The TPS65296 provides rich functions as well as good efficiency with internal low Rdson power MOSFETs. It supports flexible power state control, placing VDDQ at high-Z in S3 and discharging VDD1, VDD2, and VDDQ in S4/S5 state. Full protection features include OVP, UVP, OCP, UVLO and thermal shutdown protection. The part is available in a thermally enhanced 18-pin HotRod™ VQFN package and is designed to operate under the –40°C to 125°C junction temperature range.

The TPS65296 device provides a complete power solution for LPDDR4/LPDDR4X memory system with the lowest total cost and minimum space. It meets the JEDEC standard for LPDDR4/LPDDR4X power-up and power-down sequence requirement. The TPS65296 integrates two synchronous buck converters (VDD1 and VDD2) and a 1.5-A LDO (VDDQ).

The TPS65296 employs D-CAP3™ mode with 600-kHz switching frequency for fast transient, good load/line regulation, and support for ceramic output capacitors without an external compensation circuit.

The TPS65296 provides rich functions as well as good efficiency with internal low Rdson power MOSFETs. It supports flexible power state control, placing VDDQ at high-Z in S3 and discharging VDD1, VDD2, and VDDQ in S4/S5 state. Full protection features include OVP, UVP, OCP, UVLO and thermal shutdown protection. The part is available in a thermally enhanced 18-pin HotRod™ VQFN package and is designed to operate under the –40°C to 125°C junction temperature range.
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* Data sheet TPS65296-Complete LPDDR4/LPDDR4X Memory Power Solution datasheet (Rev. A) PDF | HTML 2020年 10月 7日

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TPS65295EVM-079 — 8-A 降壓轉換器評估模組

The TPS65295 evaluation module (EMV) is used to evaluate the TPS65295 device. The TPS65295 device provides a complete power solution for DDR4 memory system with the lowest total cost and minimum space. It meets the JEDEC standard for DDR4 power-up and power-down sequence requirement. The (...)
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TPS65296 TINA TI Reference Design

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VQFN-HR (RJE) 18 Ultra Librarian
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