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邏輯和電壓轉換
電壓轉換器及電平移位器
自動方向電壓轉換器

TXS0104E

現行

適用開汲極和推拉式應用的四位元雙向電壓位準移位器

立即訂購
產品規格表

TXS0104E

現行
產品規格表 立即訂購

產品詳細資料

Technology family TXS Applications SPIO Bits (#) 4 Data rate (max) (Mbps) 24 High input voltage (min) (V) 1.45 High input voltage (max) (V) 5.5 Vout (min) (V) 1.65 Vout (max) (V) 5.5 IOH (max) (mA) 0 IOL (max) (mA) 0 Supply current (max) (µA) 10 Features Edge rate accelerator, Output enable, Vcc isolation Input type Transmission Gate Output type 3-State, Transmission Gate Rating Catalog Operating temperature range (°C) -40 to 125
Technology family TXS Applications SPIO Bits (#) 4 Data rate (max) (Mbps) 24 High input voltage (min) (V) 1.45 High input voltage (max) (V) 5.5 Vout (min) (V) 1.65 Vout (max) (V) 5.5 IOH (max) (mA) 0 IOL (max) (mA) 0 Supply current (max) (µA) 10 Features Edge rate accelerator, Output enable, Vcc isolation Input type Transmission Gate Output type 3-State, Transmission Gate Rating Catalog Operating temperature range (°C) -40 to 125
DSBGA (YZT) 12 3.9375 mm² 2.25 x 1.75 NFBGA (NMN) 12 5 mm² 2 x 2.5 SOIC (D) 14 51.9 mm² 8.65 x 6 TSSOP (PW) 14 32 mm² 5 x 6.4 UQFN (RUT) 12 3.4 mm² 2 x 1.7 VQFN (RGY) 14 12.25 mm² 3.5 x 3.5 WQFN (BQA) 14 7.5 mm² 3 x 2.5
  • No direction-control signal needed
  • Maximum data rates:
    • 24Mbps (push pull)
    • 2Mbps (open drain)
  • Available in the Texas Instruments NanoFree™ package
  • 1.65 V to 3.6 V on A port and 2.3 V to 5.5 V on B port (V CCA ≤ V CCB)
  • No power-supply sequencing required – V CCA or V CCB can be ramped first
  • Latch-up performance exceeds 100 mA per JESD 78, class II
  • ESD protection exceeds JESD 22:
    • A port:
      • 2000-V Human-Body Model (A114-B)
      • 200-V Machine Model (A115-A)
      • 1000-V Charged-Device Model (C101)
    • B port:
      • 15-kV Human-Body Model (A114-B)
      • 200-V Machine Model (A115-A)
      • 1000-V Charged-Device Model (C101)
  • IEC 61000-4-2 ESD (B port):
    • ±8-kV contact discharge
    • ±10-kV air-gap discharge
  • No direction-control signal needed
  • Maximum data rates:
    • 24Mbps (push pull)
    • 2Mbps (open drain)
  • Available in the Texas Instruments NanoFree™ package
  • 1.65 V to 3.6 V on A port and 2.3 V to 5.5 V on B port (V CCA ≤ V CCB)
  • No power-supply sequencing required – V CCA or V CCB can be ramped first
  • Latch-up performance exceeds 100 mA per JESD 78, class II
  • ESD protection exceeds JESD 22:
    • A port:
      • 2000-V Human-Body Model (A114-B)
      • 200-V Machine Model (A115-A)
      • 1000-V Charged-Device Model (C101)
    • B port:
      • 15-kV Human-Body Model (A114-B)
      • 200-V Machine Model (A115-A)
      • 1000-V Charged-Device Model (C101)
  • IEC 61000-4-2 ESD (B port):
    • ±8-kV contact discharge
    • ±10-kV air-gap discharge

This 4-bit non-inverting translator uses two separate configurable power-supply rails. The A port is designed to track V CCA. V CCA accepts any supply voltage from 1.65 V to 3.6 V. V CCA must be less than or equal to V CCB. The B port is designed to track V CCB. V CCB accepts any supply voltage from 2.3 V to 5.5 V. This allows for low-voltage bidirectional translation between any of the 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes.

When the output-enable (OE) input is low, all outputs are placed in the high-impedance state.

The TXS0104E is designed so that the OE input circuit is supplied by V CCA.

For the high-impedance state during power up or power down, tie OE to GND through a pull-down resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

This 4-bit non-inverting translator uses two separate configurable power-supply rails. The A port is designed to track V CCA. V CCA accepts any supply voltage from 1.65 V to 3.6 V. V CCA must be less than or equal to V CCB. The B port is designed to track V CCB. V CCB accepts any supply voltage from 2.3 V to 5.5 V. This allows for low-voltage bidirectional translation between any of the 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes.

When the output-enable (OE) input is low, all outputs are placed in the high-impedance state.

The TXS0104E is designed so that the OE input circuit is supplied by V CCA.

For the high-impedance state during power up or power down, tie OE to GND through a pull-down resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.
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類型 標題 日期
* Data sheet TXS0104E4-Bit Bidirectional Voltage-Level Translator forOpen-Drain and Push-Pull Applications datasheet (Rev. K) PDF | HTML 2023年 10月 3日
Application note Understanding Transient Drive Strength vs. DC Drive Strength in CMOS Output Buffers PDF | HTML 2024年 5月 14日
White paper Understanding Functional Safety FIT Base Failure Rate Estimates per IEC 62380 and SN 29500 (Rev. A) PDF | HTML 2024年 4月 30日
Application brief Integrated vs. Discrete Open Drain Level Translation PDF | HTML 2024年 1月 9日
Application note Leveraging Edge Rate Accelerators with Auto-Sensing Level Shifters PDF | HTML 2023年 9月 29日
Application brief Future-Proofing Your Level Shifter Design with TI's Dual Footprint Packages PDF | HTML 2023年 9月 5日
Application note Do’s and Don’ts for TXB and TXS Voltage Level-Shifters with Edge Rate Accelerato PDF | HTML 2023年 6月 28日
Application brief Enabling Next Generation Processors, FPGA, and ASSP with Voltage Level Translat PDF | HTML 2023年 1月 17日
Application brief Enabling Smart Solar Inverter Designs with Level Translation PDF | HTML 2022年 10月 31日
EVM User's guide TXS-EVM User's Guide (Rev. B) PDF | HTML 2021年 6月 8日
Selection guide Voltage Translation Buying Guide (Rev. A) 2021年 4月 15日
Application note Effects of pullup and pulldown resistors on TXS and TXB devices (Rev. A) 2018年 3月 28日
Application note A Guide to Voltage Translation With TXS-Type Translators 2010年 6月 29日

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使用指南: PDF | HTML
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封裝 針腳 CAD 符號、佔位空間與 3D 模型
DSBGA (YZT) 12 Ultra Librarian
NFBGA (NMN) 12 Ultra Librarian
SOIC (D) 14 Ultra Librarian
TSSOP (PW) 14 Ultra Librarian
UQFN (RUT) 12 Ultra Librarian
VQFN (RGY) 14 Ultra Librarian
WQFN (BQA) 14 Ultra Librarian
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  • 材料內容
  • 認證摘要
  • 進行中持續性的可靠性監測
內含資訊：
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  • 組裝地點

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