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UC3708

現行

採用 16 針腳 SOIC 封裝,具有 35-V VDD 和 25-ns 傳播延遲的 3-A/3-A 雙通道閘極驅動器

產品詳細資料

Number of channels 2 Power switch IGBT, MOSFET Peak output current (A) 3 Input supply voltage (min) (V) 5 Input supply voltage (max) (V) 35 Features Enable pin, Shutdown, Thermal shutdown Operating temperature range (°C) 0 to 70 Rise time (ns) 25 Fall time (ns) 25 Propagation delay time (µs) 0.025 Input threshold CMOS, TTL Channel input logic Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 3 Driver configuration Dual
Number of channels 2 Power switch IGBT, MOSFET Peak output current (A) 3 Input supply voltage (min) (V) 5 Input supply voltage (max) (V) 35 Features Enable pin, Shutdown, Thermal shutdown Operating temperature range (°C) 0 to 70 Rise time (ns) 25 Fall time (ns) 25 Propagation delay time (µs) 0.025 Input threshold CMOS, TTL Channel input logic Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 3 Driver configuration Dual
PDIP (N) 16 181.42 mm² 19.3 x 9.4 PDIP (P) 8 92.5083 mm² 9.81 x 9.43 SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • 3.0A Peak Current Totem Pole Output
  • 5 to 35V Operation
  • 25ns Rise and Fall Times
  • 25ns Propagation Delays
  • Thermal Shutdown and Under-Voltage Protection
  • High-Speed, Power MOSFET Compatible
  • Efficient High Frequency Operation
  • Low Cross-Conduction Current Spike
  • Enable and Shutdown Functions
  • Wide Input Voltage Range
  • ESD Protection to 2kV

  • 3.0A Peak Current Totem Pole Output
  • 5 to 35V Operation
  • 25ns Rise and Fall Times
  • 25ns Propagation Delays
  • Thermal Shutdown and Under-Voltage Protection
  • High-Speed, Power MOSFET Compatible
  • Efficient High Frequency Operation
  • Low Cross-Conduction Current Spike
  • Enable and Shutdown Functions
  • Wide Input Voltage Range
  • ESD Protection to 2kV

The UC1708 family of power drivers is made with a high-speed, high-voltage, Schottky process to interface control functions and high-power switching devices — particularly power MOSFETs. Operating over a 5 V to 35 V supply range, these devices contain two independent channels. The A and B inputs are compatible with TTL and CMOS logic families, but can withstand input voltages as high as VIN. Each output can source or sink up to 3 A as long as power dissipation limits are not exceeded.

Although each output can be activated independently with its own inputs, they can be forced low in common through the action of either a digital high signal at the Shutdown terminal or by forcing the Enable terminal low. The Shutdown terminal will only force the outputs low, it will not effect the behavior of the rest of the device. The Enable terminal effectively places the device in under-voltage lockout, reducing power consumption by as much as 90%. During under-voltage and disable (Enable terminal forced low) conditions, the outputs are held in a self-biasing, low-voltage, state.

The UC3708 and UC2708 are available in plastic 8-pin MINI DIP and 16-pin bat-wing DIP packages for commercial operation over a 0°C to 70°C temperature range and industrial temperature range of -25°C to 85°C respectively. For operation over a -55°C to 125°C temperature range, the UC1708 is available in hermetically sealed 8-pin MINI CDIP, 16 pin CDIP and 20 pin CLCC packages. Surface mount devices are also available.

The UC1708 family of power drivers is made with a high-speed, high-voltage, Schottky process to interface control functions and high-power switching devices — particularly power MOSFETs. Operating over a 5 V to 35 V supply range, these devices contain two independent channels. The A and B inputs are compatible with TTL and CMOS logic families, but can withstand input voltages as high as VIN. Each output can source or sink up to 3 A as long as power dissipation limits are not exceeded.

Although each output can be activated independently with its own inputs, they can be forced low in common through the action of either a digital high signal at the Shutdown terminal or by forcing the Enable terminal low. The Shutdown terminal will only force the outputs low, it will not effect the behavior of the rest of the device. The Enable terminal effectively places the device in under-voltage lockout, reducing power consumption by as much as 90%. During under-voltage and disable (Enable terminal forced low) conditions, the outputs are held in a self-biasing, low-voltage, state.

The UC3708 and UC2708 are available in plastic 8-pin MINI DIP and 16-pin bat-wing DIP packages for commercial operation over a 0°C to 70°C temperature range and industrial temperature range of -25°C to 85°C respectively. For operation over a -55°C to 125°C temperature range, the UC1708 is available in hermetically sealed 8-pin MINI CDIP, 16 pin CDIP and 20 pin CLCC packages. Surface mount devices are also available.

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類型 標題 日期
* Data sheet Dual Non-Inverting Power Driver datasheet (Rev. C) 2007年 9月 25日
Application note Why use a Gate Drive Transformer? PDF | HTML 2024年 3月 4日
Application note Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML 2024年 1月 22日
Application note Static Magnet Power Supply Design for Magnetic Resonance Imaging Application PDF | HTML 2024年 1月 22日
Application brief External Gate Resistor Selection Guide (Rev. A) 2020年 2月 28日
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020年 2月 28日
Application note Improving Efficiency of DC-DC Conversion through Layout 2019年 5月 7日
Application brief How to overcome negative voltage transients on low-side gate drivers' inputs 2019年 1月 18日
Application brief High-Side Cutoff Switches for High-Power Automotive Applications (Rev. A) 2018年 11月 26日
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018年 10月 29日
Application note DN-35 IGBT Drive Using MOSFET Gate Drivers (Rev. A) 2018年 6月 21日
Application brief Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole 2018年 3月 16日
Application note U-118 New Driver ICs Optimize High-Speed Power MOSFET Switching Characteristics 1999年 9月 5日
Application note U-137 Practical Considerations in High Performance MOSFET, IGBT and MCT Gate 1999年 9月 5日

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PDIP (N) 16 Ultra Librarian
PDIP (P) 8 Ultra Librarian
SOIC (DW) 16 Ultra Librarian

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