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UCC21330-Q1

現行

具停用邏輯與可編程失效時間的車用 3kVRMS 4A/6A 雙通道閘極驅動器

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產品規格表

UCC21330-Q1

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 2 Isolation rating Basic Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 3000 Working isolation voltage (VIOWM) (Vrms) 850 Transient isolation voltage (VIOTM) (VPK) 4242 Peak output current (A) 6 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features Disable, High CMTI, Programmable dead time Output VCC/VDD (min) (V) 9.2 Output VCC/VDD (max) (V) 25 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 150 Rating Automotive Fall time (ns) 8 Undervoltage lockout (typ) (V) 5, 8, 12 TI functional safety category Functional Safety-Capable
Number of channels 2 Isolation rating Basic Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 3000 Working isolation voltage (VIOWM) (Vrms) 850 Transient isolation voltage (VIOTM) (VPK) 4242 Peak output current (A) 6 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features Disable, High CMTI, Programmable dead time Output VCC/VDD (min) (V) 9.2 Output VCC/VDD (max) (V) 25 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 150 Rating Automotive Fall time (ns) 8 Undervoltage lockout (typ) (V) 5, 8, 12 TI functional safety category Functional Safety-Capable
SOIC (D) 16 59.4 mm² 9.9 x 6

  • Universal: dual low-side, dual high-side or halfbridge driver

  • AEC-Q100 qualified with the following results
    • Device temperature grade 1
  • Junction temperature range –40 to +150°C
  • Up to 4A peak source and 6A peak sink output
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Up to 25V VDD output drive supply
    • 5V,8V,12V VDD UVLO options
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • UVLO protection for all power supplies
  • Fast disable for power sequencing

  • Universal: dual low-side, dual high-side or halfbridge driver

  • AEC-Q100 qualified with the following results
    • Device temperature grade 1
  • Junction temperature range –40 to +150°C
  • Up to 4A peak source and 6A peak sink output
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Up to 25V VDD output drive supply
    • 5V,8V,12V VDD UVLO options
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • UVLO protection for all power supplies
  • Fast disable for power sequencing

The UCC21330-Q1 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, GaN, and IGBT transistors.

The UCC21330-Q1 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 3kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection.

With all these advanced features, the UCC21330-Q1 device enables high efficiency, high power density, and robustness in a wide variety of power applications.

The UCC21330-Q1 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, GaN, and IGBT transistors.

The UCC21330-Q1 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 3kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection.

With all these advanced features, the UCC21330-Q1 device enables high efficiency, high power density, and robustness in a wide variety of power applications.
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重要文件 類型 標題 格式選項 日期
* Data sheet UCC21330x -Q1 Automotive 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver datasheet (Rev. A) PDF | HTML 2024年 6月 28日
Functional safety information UCC21222-Q1 and UCC21330-Q1 Functional Safety FIT Rate, FMD and Pin FMA (Rev. B) PDF | HTML 2025年 1月 30日

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開發板

UCC21220EVM-009 — UCC21220 4A、6A 3.0kVRMS 隔離式雙通道閘極驅動器評估模組

UCC21220EVM-009 專為評估 UCC21220 所設計，該元件為一款具備 3.0 kVRMS 隔離能力的雙通道閘極驅動器，可提供 4.0A 源電流與 6.0A 汲電流的峰值驅動能力。此 EVM 的目標是依照產品規格書參數評估驅動器 IC 的性能。EVM 也可當成驅動器 IC 元件選擇指南使用。EVM 可用於判斷對閘極驅動器性能的 PCB 佈線圖影響。
使用指南: PDF
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配置圖

Application Guide: Dual-Channel Schematic and Layout Design Guidelines (Rev. A)

SZZM003A.ZIP (1317 KB)
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參考設計

PMP41150 — 1000W、48V 切換式電容器轉換器參考設計

此參考設計採用無電感器開關電容器轉換拓撲結構，實現高功率密度和精巧功率級 (70mm × 55mm × 2.85mm)。利用 TLC555 - Q1 定時器的簡易控制方案可實現具有 4:1 或 3:1 轉換比的固定轉換率輸出，並可針對不同配電需求進行設定。對於 4:1 轉換比，全負載效率為 96.7%，而峰值效率則為 98.5% (Iout = 30A)。對於 3:1 轉換比，全負載效率為 97.6%，而峰值效率則為 98.7% (Iout = 25A)。
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