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UCC5870-Q1

現行

適用於 IGBT/SiC 車用、3.75kVrms 30A 單通道功能安全性絕緣式閘極驅動器

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產品規格表

UCC5870-Q1

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 1 Isolation rating Basic Withstand isolation voltage (VISO) (Vrms) 3750 Working isolation voltage (VIOWM) (Vrms) 1000 Transient isolation voltage (VIOTM) (VPK) 5250 Power switch IGBT, SiCFET Peak output current (A) 30 Features Active miller clamp, Fault reporting, Programmable dead time, Short circuit protection, Soft turn-off, Soft turnoff, Two-level turn-off, Two-level turnoff Output VCC/VDD (max) (V) 30 Output VCC/VDD (min) (V) 15 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 TI functional safety category Functional Safety-Compliant Propagation delay time (µs) 0.15 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 1000 Rise time (ns) 150 Fall time (ns) 150 Undervoltage lockout (typ) (V) Programmable
Number of channels 1 Isolation rating Basic Withstand isolation voltage (VISO) (Vrms) 3750 Working isolation voltage (VIOWM) (Vrms) 1000 Transient isolation voltage (VIOTM) (VPK) 5250 Power switch IGBT, SiCFET Peak output current (A) 30 Features Active miller clamp, Fault reporting, Programmable dead time, Short circuit protection, Soft turn-off, Soft turnoff, Two-level turn-off, Two-level turnoff Output VCC/VDD (max) (V) 30 Output VCC/VDD (min) (V) 15 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 TI functional safety category Functional Safety-Compliant Propagation delay time (µs) 0.15 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 1000 Rise time (ns) 150 Fall time (ns) 150 Undervoltage lockout (typ) (V) Programmable
SSOP (DWJ) 36 131.84 mm² 12.8 x 10.3
  • Split output driver provides 30-A peak source and 30-A peak sink currents
  • Adjustable "on the fly" gate drive strength
  • Interlock and shoot-through protection with 150-ns(max) propagation delay and programmable minimum pulse rejection
  • Primary and Secondary side active short circuit (ASC) support
  • Configurable power transistor protections
    • DESAT based short circuit protection
    • Shunt resistor based overcurrent and short circuit protection
    • NTC based overtemperature protection
    • Programmable soft turnoff (STO) and two-level turnoff (2LTOFF) during power transistor faults
  • Functional Safety-Compliant
  • Integrated diagnostics:
    • Built-in self test (BIST) for protection comparators
    • IN+ to transistor gate path integrity
    • Power transistor threshold monitoring
    • Internal clock monitoring
    • Fault alarm (nFLT1) and warning (nFLT2) outputs
  • Integrated 4-A active Miller clamp or optional external drive for Miller clamp transistor
  • Advanced high voltage clamping control
  • Internal and external supply undervoltage and overvoltage protection
  • Active output pulldown and default low outputs with low supply or floating inputs
  • Driver die temperature sensing and overtemperature protection
  • 100-kV/µs minimum common mode transient immunity (CMTI) at VCM = 1000V
  • SPI based device reconfiguration, verification, supervision, and diagnosis
  • Integrated 10-bit ADC for power transistor temperature, voltage, and current monitoring
  • Safety-related certifications:
    • 3750– VRMS isolation for 1 minute per UL1577 (planned)
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 0: –40°C to 125°C ambient operating temperature
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4b
  • Split output driver provides 30-A peak source and 30-A peak sink currents
  • Adjustable "on the fly" gate drive strength
  • Interlock and shoot-through protection with 150-ns(max) propagation delay and programmable minimum pulse rejection
  • Primary and Secondary side active short circuit (ASC) support
  • Configurable power transistor protections
    • DESAT based short circuit protection
    • Shunt resistor based overcurrent and short circuit protection
    • NTC based overtemperature protection
    • Programmable soft turnoff (STO) and two-level turnoff (2LTOFF) during power transistor faults
  • Functional Safety-Compliant
  • Integrated diagnostics:
    • Built-in self test (BIST) for protection comparators
    • IN+ to transistor gate path integrity
    • Power transistor threshold monitoring
    • Internal clock monitoring
    • Fault alarm (nFLT1) and warning (nFLT2) outputs
  • Integrated 4-A active Miller clamp or optional external drive for Miller clamp transistor
  • Advanced high voltage clamping control
  • Internal and external supply undervoltage and overvoltage protection
  • Active output pulldown and default low outputs with low supply or floating inputs
  • Driver die temperature sensing and overtemperature protection
  • 100-kV/µs minimum common mode transient immunity (CMTI) at VCM = 1000V
  • SPI based device reconfiguration, verification, supervision, and diagnosis
  • Integrated 10-bit ADC for power transistor temperature, voltage, and current monitoring
  • Safety-related certifications:
    • 3750– VRMS isolation for 1 minute per UL1577 (planned)
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 0: –40°C to 125°C ambient operating temperature
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4b

The UCC5870-Q1 device is an isolated, highly configurable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections, such as shunt-resistor–based overcurrent, NTC-based overtemperature, and DESAT detection, include selectable soft turn-off or two-level turn-off during these faults. To further reduce the application size, the UCC5870-Q1 integrates a 4-A active Miller clamp during switching, and an active gate pulldown while the driver is unpowered. An integrated 10-bit ADC enables monitoring of up to six analog inputs and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL-D compliant systems. The parameters and thresholds for these features are configurable using the SPI interface, which allows the device to be used with nearly any SiC MOSFET or IGBT.

The UCC5870-Q1 device is an isolated, highly configurable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections, such as shunt-resistor–based overcurrent, NTC-based overtemperature, and DESAT detection, include selectable soft turn-off or two-level turn-off during these faults. To further reduce the application size, the UCC5870-Q1 integrates a 4-A active Miller clamp during switching, and an active gate pulldown while the driver is unpowered. An integrated 10-bit ADC enables monitoring of up to six analog inputs and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL-D compliant systems. The parameters and thresholds for these features are configurable using the SPI interface, which allows the device to be used with nearly any SiC MOSFET or IGBT.
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UCC5871-Q1 現行 具備進階防護功能的車用 30-A 隔離式 5.7-kV VRMS IGBT/SiC MOSFET 閘極驅動器 Functional safety compliant with 5.7-kV isolation voltage

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類型 標題 日期
* Data sheet UCC5870-Q1 Isolated IGBT, SiC MOSFET Gate Driver With Real-Time datasheet (Rev. C) 2021年 9月 1日
White paper 以可靠且經濟實惠的隔離技術解決高電壓設計挑戰 (Rev. C) PDF | HTML 2024年 3月 7日
Technical article Improving safety in EV traction inverter systems PDF | HTML 2022年 12月 8日
Application note HEV/EV Traction Inverter Design Guide Using Isolated IGBT and SiC Gate Drivers (Rev. B) PDF | HTML 2022年 10月 21日
White paper 具備最佳性能的 EV 牽引逆變器設計優先順序 PDF | HTML 2022年 9月 27日
White paper 牽引逆變器 – 車輛電氣化背後的驅動力量 PDF | HTML 2022年 8月 17日
Technical article Understanding functional safety for gate drivers and traction inverter systems PDF | HTML 2022年 8月 10日
Technical article Reducing power loss and thermal dissipation in SiC traction inverters PDF | HTML 2022年 6月 10日
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 2021年 12月 16日
Certificate UL 1577 Certificate of Compliance 2021年 10月 22日
Technical article Driving next-generation EV systems with a distributed architecture PDF | HTML 2021年 9月 27日
White paper 高效整合式動力傳動解決方案： EV 普及的關鍵所在 2021年 4月 14日
More literature Protecting Power Devices in Electric Vehicle Applications 2021年 3月 23日
Certificate UCC5870QEVM-045 EU Declaration of Conformity (DoC) 2021年 2月 22日
EVM User's guide UCC5870-Q1EVM-045 User's Guide PDF | HTML 2020年 2月 4日
EVM User's guide UCC5870-Q1 Evaluation Module User's Guide 2019年 10月 1日

設計與開發

如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

UCC5870QEVM-045 — 符合 UCC5870-Q1 功能安全規範、15-A 絕緣式 IGBT/SiC MOSFET 閘極驅動器三相位 EVM

UCC5870-Q1 三相評估模組 (EVM) 專為評估具進階防護功能的 TI 15-A 隔離式單通道閘極驅動器而設計。此 EVM 的目標在於 EV/HEV 應用中驅動高功率 SiC MOSFET 和 IGBT。此三相 EVM 可用於偵錯驅動器的序列周邊介面 (SPI) 的軟體，並探索驅動器細緻診斷、防護和監控功能。

使用指南: PDF | HTML
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開發模組 (EVM) 的 GUI

UCC5870QDWJEVM-026-GUI — UCC5870-Q1 EVM GUI Software

UCC5870-Q1 EVM GUI Software
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產品
隔離式閘極驅動器
UCC5870-Q1 — 適用於 IGBT/SiC 車用、3.75kVrms 30A 單通道功能安全性絕緣式閘極驅動器 UCC5871-Q1 — 具備進階防護功能的車用 30-A 隔離式 5.7-kV VRMS IGBT/SiC MOSFET 閘極驅動器
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模擬型號

UCC5870-Q1 SIMPLIS Model (Rev. A)

SLUM763A.ZIP (250 KB) - SIMPLIS Model
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計算工具

SLURAZ3 — UCC5870-Q1 XL Calculator Tool

支援產品和硬體

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產品
隔離式閘極驅動器
UCC5870-Q1 — 適用於 IGBT/SiC 車用、3.75kVrms 30A 單通道功能安全性絕緣式閘極驅動器
下載
模擬工具

PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
要求
參考設計

TIDM-02009 — 經 ASIL D 安全概念評估的高速牽引、雙向 DC/DC 轉換參考設計

此參考設計展現如何以單一 TMS320F28388D 即時 C2000™ MCU 控制 HEV/EV 牽引變流器和雙向 DC-DC 轉換器。牽引控制運用軟體式解析器轉數位轉換器 (RDC) 將馬達驅動至高達 20,000 RPM 的高速。DC-DC 轉換器則採用尖峰電流模式控制 (PCMC) 技術，以及全橋相移式轉換器 (PSFB) 拓撲與同步整流 (SR) 機制。牽引變流器級使用由 UCC5870-Q1 智慧閘極驅動器驅動的碳化矽 (SiC) 功率級。PCMC 波形是使用最先進的 PWM 模組和比較器子系統 (CMPSS)中的內建傾斜補償產生。ASIL (...)
Design guide: PDF
電路圖: PDF
參考設計

PMP22817 — 配備整合式變壓器的汽車 SPI 可編程閘極驅動器和偏壓電源參考設計

此參考設計提供牽引逆變器與車載充電器中電源開關的隔離式偏壓電源與隔離式閘極驅動器。偏壓電源和驅動器皆可為 800-VDC 匯流排應用提供所需的高隔離 (一分鐘 3-kV RMS)。隔離式偏壓同時提供 24 VDC +15-V 和 -5-V 閘極驅動偏差。隔離式驅動器提供快速開啟與關閉這些高功率開關所需的高電流 (高達 30-A 峰值)，並提供進階防護功能。PMP22817 也提供經測試的 DC/DC 單端主要電感器轉換器 SEPIC 關閉汽車電池電壓 (6 V 至 42 V，其中包括突波/下降電壓) 以提供穩壓 24 V。

此參考設計旨在與 UCC14240-Q1 (...)

Test report: PDF
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SSOP (DWJ) 36 Ultra Librarian
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