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Explore our portfolio of passive and discrete components proven in reliability and performance

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Our passive and discrete components offer high performance in small package options for a range of applications. Devices include protection diodes, high-accuracy silicon-based linear thermistors, ultra-low-noise junction field-effect transistors, fixed-frequency oscillators and precision thin-film resistors. Our technological advancements help reliably protect your system, enhance design integration, and offer functionality and performance while reducing solution size and power.

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Simplify your design process with our leading-edge discrete technology

Reliably protect  your system from ESD and surge events

Our portfolio of electrostatic discharge (ESD), transient voltage suppressor (TVS) and Zener diodes includes multiple package and voltage options.

Benefits:

  • <0.5pF ESD diodes protect data lines with speeds up to 30GHz, ensuring signal integrity during normal operation.
  • Flat-clamp TVS technology provides a reliable solution for dissipating surge transients with a precise, flat, temperature-independent clamping voltage that minimizes residual voltage to the protected system.
  • Automotive-grade devices in the portfolio meet stringent standards for systems requiring up to 30kV protection.
Application note
Capacitance Requirements for High Speed Signals (Rev. A)
This application note addresses the capacitive loads presented by ESD protection diodes to high-speed signals.
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Selection guide
System-Level ESD Protection Guide (Rev. D)
This selection guide briefly explains how ESD devices from TI can help avoid catastrophic system failures caused by ESD strikes.
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White paper
Flat-Clamp surge protection technology for efficient system protection
How and why our flat-clamp TVS diodes provide surge protection beyond a traditional TVS solution.
PDF
Featured products for Diodes
ESD451 現行 採用 0201 封裝的 0.5-pF、5.5-V、30-KV 雙向 ESD 防護裝置
新產品 ESD601 現行 適用於高速應用的 18V、雙向超低電容 ESD 防護二極體
TVS2200 現行 22V 平箝制突波保護裝置

Enable high-performance circuitry with thin-film SiCr resistor networks

Our thin-film Silicon-chromium resistor networks use interdigitation techniques to achieve high element-to-element matching, with resilience to aging and temperature stresses.

Benefits:

  • Thin-film SiCr enables a high degree of interdigitation in small form factors while providing lower flicker noise than thick-film solutions.
  • On-chip interdigitation effectively allows multiple resistors to occupy the same location on the wafer, ensuring that any variation in thin-film resistive material on the wafer affects all resistors equally.
  • Matched resistors achieve extremely low ratiometric temperature coefficients, with typical drift of 0.2ppm/°C or less.
Technical article
整合式電阻分壓器如何提升 EV 電池系統性能
Learn how integrated resistor dividers can improve accuracy for high-voltage sensing in electric vehicle battery management systems for enhanced battery life.
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Application note
Optimizing CMRR in Differential Amplifier Circuits With Precision Matched Resist
A dive into differential signaling and the advantages of using a ratio-matched precision resistor network for a high common-mode rejection ratio.
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Product overview
Navigating Precision Resistor Networks
This product overview of precision resistor networks includes design considerations, sample applications, and an explanation of the parameters relevant to matched resistors.
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Featured products for SiCr thin-film resistors
RES11A-Q1 預覽 具備 1kΩ 固定輸入的車用低雜訊匹配薄膜電阻分壓器網路
RES11A 現行 具備 1kΩ 固定輸入的低雜訊匹配薄膜電阻分壓器網路
新產品 RES60A-Q1 預覽 具備 12.5MΩ 固定輸入的車用 1400V 匹配薄膜電阻分壓器網路

Enable low-noise, high-impedance sensor and audio circuitry with Burr-Brown™ JFETs

Discrete junction field-effect transistors (JFETs) can achieve much lower noise with comparatively lower power consumption than integrated amplifiers, making them an excellent choice for inductive-type sensors, which may require amplifiers with both low voltage and low current noise.

Benefits:

  • Extremely low levels of broadband voltage noise similar to bipolar junction transistors but with the added benefit of extremely low current noise. 
  • Single-channel flexibility and dual-channel matching options.
  • A pair of JFETs fabricated monolithically on the same die will match each other far better than individual transistors, preventing the introduction of DC offsets in high-gain circuits.
Application brief
Ultra-Low-Noise JFET Preamplifier Design for High Impedance Sensors
Explore ultra-low-noise JFET preamplifier designs for high-impedance sensors, comparing topologies to balance current consumption and noise performance across varying source impedances.
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Application brief
Trade-offs Between CMOS, JFET, and Bipolar Input Stage Technology
Learn to differentiate between CMOS, JFETs and bipolar operational amplifier technologies, focusing on trade-offs in noise, input impedance, offset and drift to guide device selection for low-noise applications.
PDF
Application note
JFE2140 Ultra-Low-Noise Pre-Amplifier
Learn how to use JFETs and operational amplifiers in composite amplifiers to amplify small signals from high-impedance sensors, with a focus on stability and noise reduction in audio applications.
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Featured products for Low-noise discrete JFETs
JFE150 現行 超低雜訊、低閘極電流、音訊、N 通道 JFET
JFE2140 現行 雙路、超低雜訊、低閘極電流音訊 N 通道 JFET

Achieve accurate thermal monitoring while reducing system complexity

Linear silicon-based thermistors maintain high sensitivity across temperature, enhancing performance and reliability. 

Benefits:

  • Eliminate linearization circuitry or hardware-based resistor-capacitor filters.
  • Execute faster and more accurate software conversions than negative temperature coefficient (NTC) thermistors while reducing memory requirements.
  • Achieve up to 50% higher accuracy than NTC thermistors without multipoint calibration.
  • Enable almost 300% faster response times and greater sensitivity at higher temperatures because of lower thermal mass.
  • Portfolio includes TI Functional Safety-Capable devices and failure-in-time rate/failure mode distribution documentation.
  • Low self-heating minimizes long-term sensor drift.
User guide
NTC Thermistor to TMP6 Linear Thermistor Replacement Guide
This user's guide describes hardware and software design considerations for converting NTC thermistor systems to linear silicon-based thermistor systems.
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Application note
Achieve ±1°C Accuracy or Better Across Temp. W/Low-Cost TMP6x Linear Thermistors
This application note provides steps and pseudocode for achieving higher accuracy with TMP6x linear silicon-based thermistors. Unlike NTCs, higher accuracy can be achieved with only a single-point calibration at any temperature.
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資源
TMP6 Thermistor design tool
This design tool provides look-up tables, performance comparisons and code examples to get started designing with TMP6 linear thermistors.
Featured products for Linear thermistors
TMP61 現行 採用 0402、0603/0805 及穿孔封裝的 1%、10-kΩ 線性熱敏電阻
TMP61-Q1 現行 採用 0402、0603/0805 及穿孔封裝的車用、1%、10kΩ 線性熱敏電阻
TMP63-Q1 現行 採用 0402、0603/0805 封裝的車用、1%、100-kΩ 線性熱敏電阻

Harness the benefits of BAW technology in our oscillators

Bulk acoustic wave (BAW) resonators offer many improvements over existing quartz and micro-electro mechanical resonator technologies. Our portfolio includes oscillators with frequencies from 1MHz to 400MHz, industry-standard packages, low power consumption and a wide supply voltage range.

Benefits:

  • BAW-based crystal oscillators offer great reliability including vibration and shock, mean time between failures (MTBF), temperature stability, aging, and environmental factors.
  • Achieves less than 100fs of root-mean-square jitter.
  • Replacing quartz oscillators with BAW oscillators does not require any design or printed circuit board layout changes.
Application note
Standalone BAW Oscillators Advantages Over Quartz Oscillators
This application report details TI BAW technology, the integration of a BAW resonator with oscillator circuitry to make a stand-alone oscillator, and the advantages of using a BAW oscillator over a quartz oscillator.
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Application note
Vibration and Mechanical Shock Performance of TI BAW Oscillators
This paper provides details on BAW oscillator performance under stringent sinusoidal, random vibration and mechanical shock conditions, and describes various Military Standard 883 test methods, test setup and performance.
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Application note
High Reliable BAW Oscillator MTBF and FIT Rate Calculations
This paper provides calculations and results for MTBF and failure-in-time values in order to achieve the best MTBF for BAW oscillators. and the procedure for these calculations.
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Featured products for Oscillators
LMK6C 現行 低抖動、高效能、突破性體聲波 (BAW) 固定頻率 LVCMOS 振盪器
LMK6H 現行 低抖動、高效能、突破性體聲波 (BAW) 固定頻率 HCSL 振盪器
LMK6P 現行 低抖動、高性能、突破性體聲波 (BAW) 固定頻率 LVPECL 振盪器

技術資源

Product overview
Product overview
Navigating Precision Resistor Networks
This document provides a detailed overview of precision resistor networks, focusing on matched resistor pairs, their configurations, ratios and applications, particularly in amplifiers.
document-pdfAcrobat PDF
影片系列
影片系列
Getting Started with Interface Protection
This training page includes several short  videos on electrostatic discharge and surge protection design considerations. Learn at your own pace with chapter-style modules.
Application note
Application note
Standalone BAW Oscillators Advantages Over Quartz Oscillators
Learn the advantages of BAW oscillators over quartz oscillators, including increased flexibility and improved temperature stability and jitter performance.
document-pdfAcrobat PDF