SBASAL3A September   2024  – January 2025 ADC3668 , ADC3669

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics - Power Consumption
    6. 6.6  Electrical Characteristics - DC Specifications
    7. 6.7  Electrical Characteristics - AC Specifications (ADC3668 - 250 MSPS)
    8. 6.8  Electrical Characteristics - AC Specifications (ADC3669 - 500 MSPS)
    9. 6.9  Timing Requirements
    10. 6.10 Typical Characteristics, ADC3668
    11. 6.11 Typical Characteristics, ADC3669
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Analog Inputs
        1. 8.3.1.1 Nyquist Zone Selection
        2. 8.3.1.2 Analog Front End Design
      2. 8.3.2 Sampling Clock Input
      3. 8.3.3 Multi-Chip Synchronization
        1. 8.3.3.1 SYSREF Monitor
      4. 8.3.4 Time-Stamp
      5. 8.3.5 Overrange
      6. 8.3.6 External Voltage Reference
      7. 8.3.7 Digital Gain
      8. 8.3.8 Decimation Filter
        1. 8.3.8.1 Uncommon Decimation Ratios
        2. 8.3.8.2 Decimation Filter Response
        3. 8.3.8.3 Decimation Filter Configuration
        4. 8.3.8.4 Numerically Controlled Oscillator (NCO)
      9. 8.3.9 Digital Interface
        1. 8.3.9.1 Parallel LVDS (DDR)
        2. 8.3.9.2 Serial LVDS (SLVDS) with Decimation
          1. 8.3.9.2.1 SLVDS - Status Bit Insertion
        3. 8.3.9.3 Output Data Format
        4. 8.3.9.4 32-bit Output Resolution
        5. 8.3.9.5 Output Scrambler
        6. 8.3.9.6 Output MUX
        7. 8.3.9.7 Test Pattern
    4. 8.4 Device Functional Modes
      1. 8.4.1 Low Latency Mode
      2. 8.4.2 Digital Channel Averaging
      3. 8.4.3 Power Down Mode
    5. 8.5 Programming
      1. 8.5.1 GPIO Programming
      2. 8.5.2 Register Write
      3. 8.5.3 Register Read
      4. 8.5.4 Device Programming
      5. 8.5.5 Register Map
      6. 8.5.6 Detailed Register Description
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Wideband Spectrum Analyzer
      2. 9.2.2 Design Requirements
        1. 9.2.2.1 Input Signal Path
        2. 9.2.2.2 Clocking
      3. 9.2.3 Detailed Design Procedure
        1. 9.2.3.1 Sampling Clock
      4. 9.2.4 Application Performance Plots
      5. 9.2.5 Initialization Set Up
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Third-Party Products Disclaimer
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.3.4 Time-Stamp

The ADC366x includes a time-stamp feature which enables tagging a specific sample on the analog input in DDC bypass mode. When enabling the feature (via SPI write), a logic low-to-high transition on the GPIO/SYSREF pin is registered on the rising edge of the sampling clock. The time stamp signal is output on the lane DOUT0 (LSB); however, the signal is not latency matched with the output data.

As shown in Figure 8-19 the time stamp signal is indicated 35 clock cycles ahead of the output data:

  • Latency output data: 43 clock cycles
  • Latency time stamp output: 8 clock cycles
ADC3668 ADC3669 Timing Diagram - Time StampFigure 8-19 Timing Diagram - Time Stamp
Table 8-4 Example register writes to enable time stamp on pin GPIO0
ADDRDATADESCRIPTION
0x1460x00Enable SYSREF on pin GPIO0.
0x1620xC0Enable time stamp function replacing the LSB.